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Reduction of Lateral Dimension on InGaAs/GaAs Multilayers on Non-(111) V-Grooved GaAs(100) Substrate by Chemical Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Sung-Bock Kim ,
Jeong-Rae Ro ,
Seong-Ju Park  and
El-Hang Lee
Sung-Bock Kim
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Yusong P. O. Box 106, Taejon, 305-600, Korea
Jeong-Rae Ro
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Yusong P. O. Box 106, Taejon, 305-600, Korea
Seong-Ju Park
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju, 506-303, Korea
El-Hang Lee
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Yusong P. O. Box 106, Taejon, 305-600, Korea
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Abstract

We have found that the lateral dimension of InGaAs and GaAs multiple layers can be effectively controlled on non-( 111) V-grooved GaAs substrates by chemical beam epitaxy using triethylgallium and trimethylindium coupled with precracked arsine or unprecracked monoethylarsine. We suggest that this effect is due to the efficient migration of adatoms from (111) to non-(111) planes. This is an improved method which overcomes the difficulty that has been associated with the method of using only (111) V-grooves in which the lateral dimension is controlled by the differences in the growth rates between (111) and (100) planes. In case of InGaAs and GaAs epilayers, the anisotropy factors of growth rate were less than 0.1 at optimum growth temperature. Photoluminescence peak originated from InGaAs/GaAs quantum wire was significantly distinct from other peaks, suggesting an effective reduction of InGaAs lateral dimension.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 49
Copyright
Copyright © Materials Research Society 1996

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