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Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

Published online by Cambridge University Press:  17 March 2011

Jer-shen Maa ,
Jong-Jan Lee ,
Douglas Tweet  and
Sheng Teng Hsu
Jer-shen Maa
Affiliation:
Sharp Laboratories of America, Camas, WA, 98607, USA
Jong-Jan Lee
Affiliation:
Sharp Laboratories of America, Camas, WA, 98607, USA
Douglas Tweet
Affiliation:
Sharp Laboratories of America, Camas, WA, 98607, USA
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, Camas, WA, 98607, USA
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Abstract

Strained SiGe was bonded to silicon dioxide by direct wafer bonding and Smart-cut technique. Strained SiGe with a graded 20%-30% Ge concentration was deposited by RTCVD on (100) Si to a thickness between 300nm to 350nm. H2+ for wafer splitting was implanted at an energy varied from 40 keV to 150 keV and a dose between 2.5E16 and 4.5E16 ions/cm2. SiGe relaxation was found to depend on wafer split temperature, and on post-split annealing temperature. SiGe relaxation of greater than 80% was observed after wafer splitting and annealing. Was it from gliding of a SiGe film weakly bonded to an oxide surface? In order to determine the relaxation mechanism, samples with different film structure were prepared. The films were then annealed at various temperatures. Some film showed a high degree of relaxation, and some showed minimal relaxation, depending mostly on hydrogen implant depth. The results indicated that the generation of dislocation is the possible cause of SiGe relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.22
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Currie, M.T., Samavedam, S.B., Langdo, T.A., Leitz, C.W., and Fitzgerald, E.A., Appl. Phys. Lett., 72, 1718 (1998).Google Scholar
[2] Luysberg, M., Kirch, D., Trinkaus, H., Holländer, B., Lenk, St., Mantl, S., Herzog, H.-J., Hackbarth, T., and Fichtner, P.F.P., J. Appl. Phys., 92, 4290, (2002).Google Scholar
[3] Maa, J.S., Tweet, D. J., Lee, J.J., Hsu, S.T., Fujii, K., Naka, T., Ueda, T., Baba, T., Awaya, N. and Sakiyama, K., MRS Proc. Vol. 765, pp. 135–140 (2003).Google Scholar
[4] Bruel, M., Aspar, B., and Auberton-Herve, A.J., Jpn. J. Appl. Phys., 36, 1636, (1997).Google Scholar
[5] H, Trinkaus, Holländer, B., Rongen, St., Mantl, S., Herzog, H.-J., Kuchenbecker, J. and Hackbarth, T., Appl. Phys. Lett., 76, 3552 (2000).Google Scholar