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Reliable Impurity Identification in Inp

Published online by Cambridge University Press:  22 February 2011

M. L. Schnoes ,
T. D. Harris ,
S. J. Pearton ,
M. A. Di Giuseppe ,
R. Bhat  and
H. M. Cox
M. L. Schnoes
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
T. D. Harris
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
M. A. Di Giuseppe
Affiliation:
Room 1A–332, AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Bhat
Affiliation:
Bell Communications Research, Red Bank, NJ 07701
H. M. Cox
Affiliation:
Bell Communications Research, Red Bank, NJ 07701
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Abstract

Low temperature, resonantly excited photoluminescence (PL) has proven to be the method of choice for impurity identification in GaAs. InP has suffered from insufficient impurity binding energy data to benefit similarly. We will report results of selectively-excited donor-acceptor pair spectroscopy for acceptor identification in InP. Ion implantation doping of high purity InP is used for generation of known impurity samples. Progress toward a complete database of acceptor binding energies in InP is reported. We will discuss the results of high magnetic field low temperature resonant photoluminescence spectroscopy for donor identification in InP. The success of donor ion implantation studies will be included. This data should provide direction for efforts in growing high purity InP by MOCVD and gas source MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 113
Copyright
Copyright © Materials Research Society 1994

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