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Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory
Published online by Cambridge University Press: 01 February 2011
Abstract
This work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si nanocrystals deposited on ultra-thin tunnel oxide with LPCVD. As compared with a Si nanocrystal memory device, a TiSi2/Si hetero-nanocrystal memory device exhibits faster programming and erasing, and longer retention time.
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- Research Article
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- Copyright © Materials Research Society 2007
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