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Self-interstitials have never been observed in crystalline Si. How about amorphous Si?

Published online by Cambridge University Press:  17 March 2011

Sjoerd Roorda
Sjoerd Roorda*
Affiliation:
Département de physique et Groupe de recherche en physique et technologie des couches mines, Université de Montréal CP 6128 succursale Centre-ville Montréal, H3C 3J7, CANADA
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Abstract

In the early days of point defect studies in electron irradiated crystalline silicon, it was surmised that the Si self-interstitial is highly mobile even at 4 K and escapes direct detection. The existence of self-interstitials has of course been confirmed through the diffusion behaviour of a range of impurities and the direct observation of larger interstitial-type clusters. Against this background, the direct observation of self-interstitials in amorphous Si would seem next to impossible. Yet just such an observation may have been made recently, through a comparison of the high-resolution radial distribution function of pure amorphous Si before and after thermal anneal and that of crystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A16.1
Copyright
Copyright © Materials Research Society 1999

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References

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