Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T11:51:10.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Si Surface Orientation Dependence on the Electrical Characteristics of HfN Gate Insulator with sub-0.5 nm EOT Formed by ECR Plasma Sputtering

Published online by Cambridge University Press:  20 February 2014

Nithi Atthi ,
Dae-Hee Han  and
Shun-ichiro Ohmi
Nithi Atthi
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Dae-Hee Han
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Shun-ichiro Ohmi
Affiliation:
Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Get access

Abstract

This paper investigated the silicon substrate orientation dependence on the electrical properties of high-κ HfN gate insulator formed by electron-cyclotron-resonance (ECR) plasma sputtering. The effect of N2/4.9%H2 forming-gas annealing (FGA) was studied. By using N2/4.9%H2 FGA at 500°C for 20 min, the interfacial layer (IL) formation was not formed and led to the zero-interface layer (ZIL). The EOTs of 0.47 and 0.51 nm with leakage current of 1.1 and 1.4 A/cm2 (@VFB -1 V) were obtained on p-Si(100) and p-Si(110), respectively. The density of interface states (Dit) with the order of 1011 cm-2eV-1 was obtained on both p-Si(100) and p-Si(110). This suggests that the direct deposition of HfN film with ZIL prevented the degradation of electrical characteristics on the p-Si(100) and p-Si(110) substrate in comparison to the case of oxide-based hafnium gate insulator.

Keywords

insulatorsputteringthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1588: Symposium E – Functional Oxide Thin Films and Heterostructures for Innovative Devices , 2014 , jsapmrs13-1588-6607
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Moore, G. E., Electronics. 38, 114–117 (1965).Google Scholar
Lo, S. H., et al. ., IEEE. Electron. Dev. Lett. 18, 209–211 (1997).CrossRefGoogle Scholar
Lee, B. H., et al. ., IEDM. Tech. Dig., 39-42 (2000).Google Scholar
Bersuker, G., et al. ., J. Appl. Phys. 100, 094108 (2006).CrossRefGoogle Scholar
Han, H. S., and Ohmi, S., IEICE, Electron. Exp. 9, 16, 1329–1334 (2012).CrossRefGoogle Scholar
Han, H. S., Han, D. H., and Ohmi, S., Electron. Lett., 49, 7, 500–501 (2013).CrossRefGoogle Scholar
Wang, X., Khare, M., and Ma, T. P., Symp. VLSI Technol. Dig. Tech., 226-227 (1996).Google Scholar
Swaroop, B., J. Appl. Phys D. 6, 1090–1092 (1973).CrossRefGoogle Scholar
Quah, H. J. and Cheong, K. Y., J. Alloys Compd., 529, 73–83 (2012).CrossRefGoogle Scholar
Quah, H. J. and Cheong, K. Y., Nanoscale Res. Letts, Springer open J., 1-7 (2013).Google Scholar
Jin, H., et al. ., J. Electrochem. Soc., 153, 8, G750-G754 (2006).CrossRefGoogle Scholar
Young, C. D., et al. ., Solid-state Electron. Article in press (2012).Google Scholar
Atthi, N., Han, D. H., and Ohmi, S., IEICE Technical Report, 113, 247, 5–9 (2013).Google Scholar
Rajagopalan, S., et al. ., Proc. of IEEE IRPS, 28-31 (1993).Google Scholar
Lai, C. S., Peng, S. K., et al. ., Electrochem Solid-state Lett. 9, 7, G239-G241 (2006).CrossRefGoogle Scholar
Yang, K. J. and Hu, C., IEEE. Trans. Electron Devices, 46, 7, 1500–1501 (1999).CrossRefGoogle Scholar
Saito, S., Torii, K., Hiratani, M., and Onai, T., IEEE. Electron Dev. Lett. 23, 6, 348–350 (2002).CrossRefGoogle Scholar
Terman, L. M., Solid-state Electron. 5, 285–299 (1962).CrossRefGoogle Scholar
Hsu, B.-C., et al. ., IEEE Trans. on Electron. Dev. 49, 12, 2204–2208 (2002).CrossRefGoogle Scholar