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SiC Epitaxial Growth on Carbon

Published online by Cambridge University Press:  10 February 2011

I. Khlebnikov ,
V. Madangarli  and
T. S. Sudarshan
I. Khlebnikov
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
V. Madangarli
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
T. S. Sudarshan
Affiliation:
Department of Electrical and Computer Engineering University of South Carolina, Columbia, SC 29208
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Abstract

The possibility of single crystal SiC expitaxial growth on freestanding amorphous carbon films (500–1000 Å) as well as thin amorphous carbon layers deposited on mono-crystalline SiC seeds, by conventional physical vapor transport (PVT) technique, is demonstrated. Preliminary experiments indicate that under certain specific growth conditions, 3D SiC single crystals (100 – 600 Å) of different polytypes can be grown on freestanding amorphous carbon layers, with more or less equal probability of formation for each polytype. On the other hand, under low axial temperature gradients (< 30°C/cm), the SiC epitaxial growth on carbon is amorphous in nature. Also, experimental results that demonstrate two-dimensional single crystal SiC epitaxial growth on an amorphous carbon film deposited on mono-crystalline 6H-SiC wafer, is presented. Experiments performed in our laboratory indicate that monocrystalline SiC growth is possible on amorphous carbon layers upto 0.1 μm thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 129
Copyright
Copyright © Materials Research Society 1998

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