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SiGe/Si Nanowire Axial Heterostructures Grown by LPCVD Using Ga-Au
Published online by Cambridge University Press: 28 February 2013
Abstract
The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.
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- MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd06-05
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- Copyright © Materials Research Society 2013
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