Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T00:57:06.385Z Has data issue: false hasContentIssue false
  • English
  • Français

SiGe/Si Nanowire Axial Heterostructures Grown by LPCVD Using Ga-Au

Published online by Cambridge University Press:  28 February 2013

A. Rodríguez ,
T. Rodríguez ,
C. Ballesteros  and
J. Jiménez
A. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
T. Rodríguez
Affiliation:
Tecnología Electrónica, Universidad Politécnica de Madrid, E.T.S.I.T., 28040 Madrid, Spain
C. Ballesteros
Affiliation:
Física, Universidad Carlos III, 28911 Leganés (Madrid), Spain
J. Jiménez
Affiliation:
GdS Optronlab, Ed. I+D, Universidad de Valladolid, 47011 Valladolid, Spain
Get access

Abstract

The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.

Keywords

nanostructureGatransmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd06-05
Copyright
Copyright © Materials Research Society 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Eisenhawer, B., Sivakov, V., Berger, A., Christiansen, S.. Nanotechnology 22, 305604 (2011).CrossRefGoogle Scholar
Hansen, M.. Constitution of Binary Alloys (Second Edition, McGraw-Hill, New York, 1958). Pages 206 (Au-Ge), 232 (Au-Si), 743(Ga-Ge), 756 (Ga-Si).CrossRefGoogle Scholar
Clark, T. E., Nimmatoori, P., Lew, K. K., Pan, L., Redwing, J. M., Dickey, E. C.. Nano Lett. 8, 1246 (2008).CrossRefGoogle Scholar
Jeon, M., Tomitsuka, Y. and Kamisako, K.. Journal of Industrial and Engineering Chemistry 14, 836 (2008).CrossRefGoogle Scholar
Iacopi, F., Vereecken, P. M., Schaekers, M., Caymax, M., Moelans, N., Blanpain, B., Richard, O., Detavernier, C. and Griffiths, H.. Nanotechnology 18, 505307 (2007).CrossRefGoogle Scholar
Schmidt, V., Wittemann, J. V., Gösele, U.. Chem. Rev. 110, 361 (2010).CrossRefGoogle Scholar
Lugstein, A., Steinmair, M., Hyun, Y. J., Bertagnolli, E., Pongratz, P.. Appl. Phys. Lett 90, 023109 (2007).CrossRefGoogle Scholar
Monasterio, M., Rodríguez, A., Rodríguez, T., Ballesteros, C.. Mater. Res. Soc. Symp. Proc. Vol. 1408 (2012). DOI: 10.1557/opl.2012.34.Google Scholar
Kawashima, T., Mizutani, T., Nakagawa, T., Torii, H., Saitoh, T., Komori, K., Fujii, M.. Nano Lett. 8, 362 (2008).CrossRefGoogle Scholar