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A Silicon Field Emitter Array Planar Vacuum FET Fabricated with Microfabrication Techniques

Published online by Cambridge University Press:  25 February 2011

Henry F. Gray  and
G. J. Campisi
Henry F. Gray
Affiliation:
Naval Research Laboratory, Washington, DC 20375
G. J. Campisi
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

In this paper we will discuss a new type of field effect transistor, a vacuum FET, where the usual channel material is the vacuum rather than a semiconductor. This new device is based on Field Emitter Arrays (FEA) which are inherently submicron structures. That is, the field emitters themselves must have dimensions less that 0.1 micrometers in order to generate the high electrostatic fields necessary for electron tunneling, and the control gate (or extraction electrode) must be very close to the field emitter tip in order to generate these high fields with reasonable voltages. Consequently, this new “FET” is the first of a new class of vaccum electronic switching devices based on microfabrication techniques, and susceptible to circuit integration.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 25
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Greene, R.F., Gray, H.F., and Campisi, G.J., IEDM Tech. Digest 172 (1985).Google Scholar
2. Spindt, C.A., Holland, C.E., and Stowell, R.D., Appl. of Surface Sci., 16, 268 (1983).CrossRefGoogle Scholar
3. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons publishers, New York, 1981), p. 648.Google Scholar
4. Campisi, G.J. and Gray, H.F., presented at the 1986 MRS Fall Meeting (talk C2.6 in Nanofabrication session), Boston, MA, 1986 (to be published).Google Scholar
5. Gray, H.F., Ardis, L., and Campisi, G.J., Rev. Sci. Instru., (to be published).Google Scholar