Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-18T06:09:11.681Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Layer Stacking Enabled by Wafer Bonding

Published online by Cambridge University Press:  26 February 2011

Chuan Seng Tan ,
Kuan-Neng Chen ,
Andy Fan ,
Anantha Chandrakasan  and
Rafael Reif
Chuan Seng Tan
Affiliation:
tancs@alum.mit.edu, Nanyang Technological University, EEE/Microelectronics, 50 Nanyang Avenue, S2-B2c-127, Singapore 639798, Singapore, 639798, Singapore, 65-6790-5636
Kuan-Neng Chen
Affiliation:
knchen@alum.mit.edu, MIT, Cambridge, MA, 02139, United States
Andy Fan
Affiliation:
fana@mtl.mit.edu, MIT, Cambridge, MA, 02139, United States
Anantha Chandrakasan
Affiliation:
anantha@mtl.mit.edu, MIT, Cambridge, MA, 02139, United States
Rafael Reif
Affiliation:
reif@mtl.mit.edu, MIT, Cambridge, MA, 02139, United States
Get access

Abstract

Three-dimensional integrated circuits (3-D ICs), in the form of a vertical stack of several interconnected device layers, have many performance, form factor, and integration advantages. The main objective of this work is to develop reliable process technology to enable the fabrication of a vertically interconnected silicon multi-layer stack.

Low temperature wafer bonding processes, both copper thermo-compression bonding and silicon dioxide fusion bonding, are studied extensively as key enabling technology. Cu thermo-compression bonding is studied for its feasibility as a permanent bond between active layers in a multi-layer stack. Silicon dioxide wafer bonding, on the other hand, is used as a temporary bond to attach a donor wafer to a handle wafer during donor wafer thinning and subsequent layer transfer. Sufficiently high bond strength is obtained with careful surface preparation and activation prior to bonding.

Silicon layer can be stacked either in a “face down” or “face up” orientation. Using a combination of wafer bonding and thinning, double-layer stacks in both orientations are fabricated. By repeating these steps on two “face down” double-layer stacks, a four-layer stack is successful demonstrated.

Keywords

bondingCuoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 970: Symposium Y – Enabling Technologies for 3-D Integration , 2006 , 0970-Y04-01
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sylvester, D. and Hu, C., Proc. IEEE 8(5), 634 (2001).Google Scholar
2. Kapur, P., McVittie, J.P., and Saraswat, K.C., Proc. IEEE Interconnect Technology Conference, 233 (2001).Google Scholar
3. International Technology Roadmap for Semiconductors (2001).Google Scholar
4. Su, D.K., Loinaz, M.J., Masui, S., and Wooley, B.A., IEEE J. Solid State Circuits 28(4), 420 (1993).Google Scholar
5. Tan, C. S., Chen, K. N., Fan, A., and Reif, R., Electrochem. Solid State Lett. 8, G1 (2005).10.1149/1.1825292Google Scholar
6. Holloway, K. and Fryer, P. M., Appl. Phys. Lett., 57, 736 (1990).Google Scholar
7. Chen, K. N., Tan, C. S., Fan, A., and Reif, R., Electrochem. Solid State Lett. 7, G14 (2004).Google Scholar
8. Chen, P. H., Peng, H. Y., Hsieh, C. M., and Chyu, M. K., Sens. Actuators A 93, 132 (2001).Google Scholar
9. van der Groen, S., Rosmeulen, M., Jansen, P., Baert, K., and Deferm, L., Int. Conf. Solid State Sensors and Actuators, 629 (1997).Google Scholar
10. Hayashi, Y., Wada, S., Kajiyana, K., Oyama, K., Koh, R., Takahashi, S., and Kunio, T., Symp. VLSI Technology, Tech. Dig., 95 (1990).Google Scholar
11. Tan, C. S., Fan, A., Chen, K. N., and Reif, R., Appl. Phys. Lett. 82(16), 2649 (2003).10.1063/1.1569657Google Scholar
12. Tan, C. S., Chen, K. N., Fan, A., and Reif, R., Electrochem. Solid State Lett. 8(1), G1 (2005).10.1149/1.1825292Google Scholar
13. Maszara, W.P., Goetz, G., Caviglia, A., and McKitterick, J.B., J. Appl. Phys. 64(10), 4943 (1988).Google Scholar
14. Tan, C. S., Reif, R., Theodore, D., and Pozder, S., Appl. Phys. Lett. 87(20), 201909 (2005).Google Scholar