Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Wu, Fangzhen
Wang, Huanhuan
Byrappa, Shayan
Raghothamachar, Balaji
Dudley, Michael
Wu, Ping
Xu, Xueping
and
Zwieback, Ilya
2013.
Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC.
Journal of Electronic Materials,
Vol. 42,
Issue. 5,
p.
787.
Wu, Fang Zhen
Dudley, Michael
Wang, Huan Huan
Byrapa, Sha Yan
Sun, Shun
Raghothamachar, Balaji
Sanchez, Edward
Chung, Gil Yong
Hansen, Darren M.
Mueller, Stephan G.
and
Loboda, Mark J.
2013.
The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC.
Materials Science Forum,
Vol. 740-742,
Issue. ,
p.
217.
Zhou, Tianyi
Raghothamachar, Balaji
Wu, Fangzhen
and
Dudley, Michael
2013.
Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates.
MRS Proceedings,
Vol. 1494,
Issue. ,
p.
121.
Zhou, Tianyi
Raghothamachar, Balaji
Wu, Fangzhen
Dalmau, Rafael
Moody, Baxter
Craft, Spalding
Schlesser, Raoul
Dudley, Michael
and
Sitar, Zlatko
2014.
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation.
Journal of Electronic Materials,
Vol. 43,
Issue. 4,
p.
838.
Wu, Fangzhen
Wang, Huanhuan
Raghothamachar, Balaji
Dudley, Michael
Mueller, Stephan G.
Chung, Gil
Sanchez, Edward K.
Hansen, Darren
and
Loboda, Mark J.
2014.
Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC.
MRS Proceedings,
Vol. 1693,
Issue. ,
Yao, Yongzhao
Ishikawa, Yukari
Sugawara, Yoshihiro
Sato, Koji
Shirai, Takayuki
Danno, Katsunori
Suzuki, Hiroshi
Sakamoto, Hidemitsu
Bessho, Takeshi
Dierre, Benjamin
Watanabe, Kentaro
and
Sekiguchi, Takashi
2014.
Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar $\{ 1\bar{1}00\} $ face, cathodoluminescence imaging, and transmission electron microscopy.
Japanese Journal of Applied Physics,
Vol. 53,
Issue. 8,
p.
081301.
Hattori, Ryo
Oku, Osamu
Sugie, Ryuichi
Murakami, Kazutsugu
and
Kuzuhara, Masaaki
2018.
Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy.
Applied Physics Express,
Vol. 11,
Issue. 7,
p.
075501.
Kamata, Isaho
Tsusaka, Yoshiyuki
Tanuma, Ryohei
and
Matsui, Junji
2018.
X-ray topographical analysis of 4H-SiC epitaxial layers using a forward-transmitted beam under a multiple-beam diffraction condition.
Japanese Journal of Applied Physics,
Vol. 57,
Issue. 9,
p.
090314.
Ishikawa, Yukari
Yao, Yong-Zhao
Sato, Koji
Sugawara, Yoshihiro
and
Yokoe, Daisaku
2019.
Invited: Analysis and Detection of Dislocations in GaN.
p.
63.
Hattori, Ryo
Oku, Osamu
Sugie, Ryuichi
Murakami, Kazutsugu
and
Kuzuhara, Masaaki
2019.
Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method.
Materials Science Forum,
Vol. 963,
Issue. ,
p.
259.
Hadorn, Jason Paul
Tanuma, Ryohei
Kamata, Isaho
and
Tsuchida, Hidekazu
2020.
Direct evaluation of threading dislocations in 4H-SiC through large-angle convergent beam electron diffraction.
Philosophical Magazine,
Vol. 100,
Issue. 2,
p.
194.
Yao, Yongzhao
Sugawara, Yoshihiro
and
Ishikawa, Yukari
2020.
Identification of Burgers vectors of dislocations in monoclinic β-Ga2O3 via synchrotron x-ray topography.
Journal of Applied Physics,
Vol. 127,
Issue. 20,
Ota, Chiharu
Nishio, Johji
Okada, Aoi
and
Iijima, Ryosuke
2021.
Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes.
Journal of Electronic Materials,
Vol. 50,
Issue. 11,
p.
6504.
Peng, Hongyu
Ailihumaer, Tuerxun
Liu, Yafei
Raghotharmachar, Balaji
Huang, Xianrong
Assoufid, Lahsen
and
Dudley, Michael
2021.
Dislocation contrast on X-ray topographs under weak diffraction conditions.
Journal of Applied Crystallography,
Vol. 54,
Issue. 4,
p.
1225.
Ailihumaer, Tuerxun
Peng, Hongyu
Fujie, Fumihiro
Raghothamachar, Balaji
Dudley, Michael
Harada, Shunta
and
Ujihara, Toru
2021.
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals.
Materials Science and Engineering: B,
Vol. 271,
Issue. ,
p.
115281.
Kamata, Isaho
Hoshino, Norihiro
Betsuyaku, Kiyoshi
Kanda, Takahiro
and
Tsuchida, Hidekazu
2022.
Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method.
Journal of Crystal Growth,
Vol. 590,
Issue. ,
p.
126676.
Yao, Yongzhao
Hirano, Keiichi
Sugawara, Yoshihiro
and
Ishikawa, Yukari
2022.
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography.
Semiconductor Science and Technology,
Vol. 37,
Issue. 11,
p.
115009.
Yao, Yongzhao
Sugawara, Yoshihiro
Sato, Koji
Okada, Narihito
Tadatomo, Kazuyuki
and
Ishikawa, Yukari
2022.
Observation of threading dislocations with a c + m type Burgers vector in HVPE GaN substrates using multi-photon excitation photoluminescence and TEM.
Journal of Crystal Growth,
Vol. 592,
Issue. ,
p.
126748.
Peng, Hongyu
Chen, Zeyu
Liu, Yafei
Raghothamachar, Balaji
Huang, Xianrong
Assoufid, Lahsen
and
Dudley, Michael
2022.
Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution.
Journal of Applied Crystallography,
Vol. 55,
Issue. 3,
p.
544.
Yao, Yongzhao
Hirano, Keiichi
Yamaguchi, Hirotaka
Sugawara, Yoshihiro
Okada, Narihito
Tadatomo, Kazuyuki
and
Ishikawa, Yukari
2022.
A synchrotron X-ray topography study of crystallographic defects in ScAlMgO4 single crystals.
Journal of Alloys and Compounds,
Vol. 896,
Issue. ,
p.
163025.