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Single Source Precursors for III-V OMCVD Growth and Pyrolysis Studies

Published online by Cambridge University Press:  25 February 2011

Richard A. Jones ,
Alan H. Cowley  and
John G. Ekerdt
Richard A. Jones
Affiliation:
Department of Chemistry, The University of Texas at Austin, Austin, TX 78712
Alan H. Cowley
Affiliation:
Department of Chemistry, The University of Texas at Austin, Austin, TX 78712
John G. Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

Compounds of the type (L2MEL'2)x, where M and E are the group III and V elements, respectively, and L and L' are ligands which may be thermally eliminated are being studied as single source precursors to III-V semiconductors. An array of these compounds have been synthesized with various III-V combinations, and hydride and alkyl ligands. Film growth was studied over the temperature range of 450-600 °C and at 10−4 Torr. Growth rates of 1 μm/hr are typical when the compounds are maintained at 125-140 °C. (Me2Ga(μ-t-Bu2As) [2 led to films which were polygrained with the grains oriented in the (111) direction and retained the 1:1 stoichiometry of the precursor. Films from [Me2Ga(μ-i-Pr2As)]3 did not retain the 1:1 stoichiometry and did not show the preference for (111)- oriented growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 73
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] See for example: Jones, R. A., Cowley, A. H., Benac, B. L., Kidd, K. B., Ekerdt, J. G. and Miller, J. E., Mat. Res. Soc. Symp. Proc. (1989) 131, 51–57 and references therein.Google Scholar
[2] Cowley, A. H. and Jones, R. A. Angew. Chem. Int. Ed. Engl. (1990) 28, 1208–1215.Google Scholar
[3] Miller, J. E., Kidd, K. B., Cowley, A. H., Jones, R. A., Ekerdt, J.G., Gysling, H. J., Wernberg, A. A. and Blanton, T. N. Chem. Mat. (1990) 2, 589–593.Google Scholar
[4] For examples of work on single source precursors by other research groups see the following: (a) Pitt, C. G., Higa, K. T., McPhail, A. T. and Wells, R. L. Inorg. Chem. (1986) 25, 2483; (b) R. L. Wells, A. P. Purdy, A. T. McPhail and C. G. Pitt J. Organomet. Chem. (1986) 308, 281; (c) O. T. Beachley, J. P. Kopasz, H. Zhang, W. E. Hunter and J. L. Atwood J. Organomet. Chem. (1987) 325, 69; (d) A. P. Purdy, A. T. McPhail and C. G. Pitt J. Organometallics (1987) 6, 2099; (e) E. K. Bryne, L. Parkanyi and K. H. Theopold Science (1988), 241, 332; (f) K. T. Higa and C. George Organometallics (1990) 9, 275; (f) F. Maury and G. Constant Polyhedron (1984) 3, 581 See also F.Maury, M. Combes, G. Constant, R. Cartes and J. B. Renucci J. Phys. Colloq. (1982) 43, Cl; (g) L. V. Interrante, G. A. Sigel, M. Garbauskas, C. Hejna and G. A. Slack Inorg. Chem. 1989) 28, 252; (h) D. C. Bradley, D. M. Frigo, M. B. Hursthouse and B. Hussain Organometallics (1988) 5, 1112.Google Scholar
[5] Cowley, A. H., Jones, R. A., Mardones, M. A., Ruiz, J., Atwood, J. L. and Bott, S. G. Angew. Chem. Int. Ed. Engl. (1990) 29, 1150.Google Scholar
[6] Cowley, A. H., Jones, R. A., Mardones, M. A. Bott, S. G. and Atwood, J.L. Angew. Chem. Int. Ed. Engl. Accepted (1990).Google Scholar