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Siox Related Photoluminescence Excitation in Porous Silicon

Published online by Cambridge University Press:  15 February 2011

T. V. Torchinskaya ,
N. E. Korsunskaya ,
B. R. Dzumaev  and
M. K. Sheinkman
T. V. Torchinskaya
Affiliation:
Institute of Semiconductor Physics, National Ukrainian Academy of Sciences, 252028, Kiev, UKRAINE
N. E. Korsunskaya
Affiliation:
Institute of Semiconductor Physics, National Ukrainian Academy of Sciences, 252028, Kiev, UKRAINE
B. R. Dzumaev
Affiliation:
Institute of Semiconductor Physics, National Ukrainian Academy of Sciences, 252028, Kiev, UKRAINE
M. K. Sheinkman
Affiliation:
Institute of Semiconductor Physics, National Ukrainian Academy of Sciences, 252028, Kiev, UKRAINE
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Abstract

Using PL, PLE, secondary ion mass spectroscopy (SIMS) and EPR investigations we show in this paper that two luminescence bands with different PL excitation spectra exist on the surface of silicon wires in PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 159
Copyright
Copyright © Materials Research Society 1996

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References

1. Canham, L. T., Appl. Phys. Lett. 57 (10), 1046–1048 (1990).Google Scholar
2. Kanemitsu, Y., Matsumoto, T., Futagi, T., Mimura, H., Jap. J. Appl. Phys. 32, 411–414 (1993).Google Scholar
3. Tsai, C., Li, K.H., Kinosky, D.S., Qian, R.Z., Hsu, T.C., Irby, J.T., etc., Appl.Phys.Lett.,60, 1700, (1992).Google Scholar
4. Prokes, S.M., Glembocki, O.J., Berdudez, V.M., and Kaplan, R., Phys.Rev. B 45, 13788 (1992)Google Scholar
5. Kontkiewichz, A.J., Kontkiwicz, A.M., Siejka, J., Sen, S., Nowak, G., Hoff, A.M.,Sakthivel, P., Ahmed, K., Mukherjee, P., Witanachchi, S., Lagowski, J., Appl.Phys.Lett. 65 (11), 1436–1438 (1994).Google Scholar
6. Stutzman, M., Brandt, M.S., Rosenbauer, M., Weber, J., Fuchs, H.D., Phys. Rev. B, 47 (8), 4806–4809 (1992).Google Scholar
7. Pickering, C., Beale, M.I.J., Robbins, D.J., Pearton, P.J., and Greef, R., J.Phys. C,17, 6535 (1984).Google Scholar
8. Suzuki, T., Sakai, T., Zhang, L., Nishiyama, Y., Pickering, A. C., Beale, M.I.J., Robbins, D.J., Pearton, P.J., and Greef, R., J.Phys. C,17, 6535Google Scholar
9. Nishikawa, H., Tohmon, R., Ohki, Y., Nagasawa, K., Hama, Y., J. Appl. Phys. 65 (12), 4672–4678 (1989).Google Scholar
10. Munekuni, S., Yamanaka, T., Shimogaichi, Y., Tohmon, R., Ohki, Y., Nagasawa, K., Hama, Y., J.Appl. Phys. 68 (3), 1212 (1990).Google Scholar
11. Prokes, S.M., Appl. Phys. Lett., 62, 3244 (1993).Google Scholar