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Structural Characterization of InAs/(GaIn)Sb Superlattices for IR Optoelectronics

Published online by Cambridge University Press:  10 February 2011

J. Wagner ,
J. Schmitz ,
F. Fuchs ,
U. Weimar ,
N. Herres ,
G. Tränkle  and
P. Koidl
J. Wagner
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
J. Schmitz
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
F. Fuchs
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
U. Weimar
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
N. Herres
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
G. Tränkle
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
P. Koidl
Affiliation:
Fraunhofer-Institut für Angewandte Festk6rperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
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Abstract

We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 39
Copyright
Copyright © Materials Research Society 1996

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References

1. Smith, D.L. and Mailhiot, C., J. Appl. Phys. 62, 2545 (1987).Google Scholar
2. Chow, D.H., Miles, R.H., Schulman, J.N., Collins, D.A., and McGill, T.C., Semicond. Sci. Technol. 6, C47 (1991); M.J. Yang and B.R. Bennett, Electron. Lett. 30, 1710 (1994).Google Scholar
3. Miles, R.H., Chow, D.H., Zhang, Y.-H., Brewer, P.D., and Wilson, R.G., Appl. Phys. Lett. 66, 1921 (1995); D.H. Chow, R.H. Miles, T.C. Hasenberg, A.R. Kost, Y.-H. Zhang, H.L. Dunlap, and L. West, Appl. Phys. Lett. 67, 3700 (1995).Google Scholar
4. Schmitz, J., Wagner, J., Fuchs, F., Herres, N., Koidl, P., and Ralston, J.D., J. Cryst. Growth 150, 858 (1995).Google Scholar
5. Wagner, J., Fuchs, F., Herres, N., Schmitz, J., and Koidl, P., Proceedings of the 3rd Int. Symp. on Long Wavelength Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society Proceedings 95–28, 201 (1995).Google Scholar
6. Herres, N., Fuchs, F., Schmitz, J., Pavlov, K.M., Wagner, J., Ralston, J.D., Koidl, P., Gadaleta, C., and Scamarcio, G., to appear in Phys. Rev. B.Google Scholar
7. See, e.g., Aspnes, D.E., in Handbook of Optical Constants, ed. Palik, E. (Academic Press, New York, 1985), p. 89.Google Scholar
8. Fuchs, F., Herres, N., Schmitz, J., Pavlov, K.M., Wagner, J., Koidl, P., and Roslund, J.H., Proc. SPIE 2554 (1995), p. 70.Google Scholar
9. Behr, D., Wagner, J., Schmitz, J., Herres, N., Ralston, J.D., Koidl, P., Ramsteiner, M., Schrottke, L., and Jungk, G., Appl. Phys. Lett. 65, 2972 (1994).Google Scholar
10. Wagner, J., Schmitz, J., Herres, N., Ralston, J.D., and Koidl, P., Appl. Phys. Lett. 66, 3498 (1995).Google Scholar
11. Herzinger, C.M., Snyder, P.G., Johs, B., and Woollam, J.A., J. Appl. Phys. 77, 1715 (1995).Google Scholar
12. See, e.g., Jusserand, B. and Cardona, M., in Light Scattering in Solids V, eds. Cardona, M. and Giintherodt, G. (Springer, Berlin, 1989), p. 49.Google Scholar
13. Yano, M., Furuse, H., Iwai, Y., Yoh, K., and Inoue, M., J. Cryst. Growth 127, 807 (1993).Google Scholar
14. Drabble, J.R. and Brammer, A.J., Proc. Phys. Soc. 91, 959 (1967).Google Scholar
15. Semiconductor Physics of Group IV Elements and 111-V Compounds, edited by Madelung, O., Landolt-Börnstein, , New Series, Group III, Vol.17, Pt. a (Springer, Heidelberg, 1982).Google Scholar
16. Pollak, F.H., in Semiconductors and Semimetals, Vol. 32, ed. Pearsall, T.P. (Academic Press, New York, 1990), p. 17.Google Scholar
17. Herzinger, C.M., Snyder, P.G., Celii, F.G., Kao, Y.-C., Chow, D., Johs, B., and Woollam, J.A., J. Appl. Phys. 79, 2663 (1996).Google Scholar