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Studies of Oxygen Thermal Donor Formation Under Stress*

Published online by Cambridge University Press:  28 February 2011

Paul W. Wang  and
James W. Corbett
Paul W. Wang
Affiliation:
Institute for the Study of Defects in Solids Physics Department, SUNY/Albany Albany, NY 12222 USA
James W. Corbett
Affiliation:
Institute for the Study of Defects in Solids Physics Department, SUNY/Albany Albany, NY 12222 USA
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Abstract

Oxygen thermal donor formation under stress and following various pre-heat treatments was investigated by resistivity measurements. Thermal donor formation at 450°C, with and without bending stress, is monitored in p-type Cz-silicon following various heat-treatments. As has been shown by others, the thermal donor formation rate depends upon the pre-treatment of the samples. We find that the rate also depends on the stress, being faster, or slower, on the tensile side than on the compressed side depending on the pre-treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 167
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Supported in part by the DOE-JPL Flat Solar Array Program and the Mobil Foundation.

References

REFERENCES

* Supported in part by the DOE-JPL Flat Solar Array Program and the Mobil Foundation.Google Scholar
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