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Supercritical Fluid Treatment to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films

Published online by Cambridge University Press:  01 February 2011

Julien Beynet
Affiliation:
julien.beynet@cea.fr, Air Liquide, CRCD, 13 rue LAFONTAINE, SEYSSINET, N/A, 38170, France
Vincent Jousseaume
Affiliation:
vincent.jousseaume@cea.fr, CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
Alain Madec
Affiliation:
alain.madec@airliquide.com, Air Liquide, 1 Chemin de la Porte des Loges, B.P. 126, Jouy-en-Josas, N/A, 78354, France
Bruno Rémiat
Affiliation:
bruno.remiat@cea.fr, CEA/LETI, 17 rue des Martyrs, Cedex 9, Grenoble, N/A, 38054, France
N. Dominique Albérola
Affiliation:
nicole.alberola@univ-savoie.fr, LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Régis Mercier
Affiliation:
regis.mercier@lmops.cnrs.fr, LMOPS, bâtiment IUT, Le Bourget du Lac, N/A, 73376, France
Gérard Passemard
Affiliation:
gerard.passemard@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, N/A, 38920, France
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Abstract

Spin-on glass organosilicate films are promising Ultra Low-ĸ (ULK) interlevel dielectric candidates in which porosity can be created by incorporating thermally labile porogens. The as-deposited film (called the hybrid film) consists of a methylsilsesquioxane (MSQ) matrix and an organic porogen. The standard porogen removal step consists of a 450°C thermal annealing. However, it leaves polymeric residues suspected to cause an incomplete matrix crosslinking and, consequently, to be detrimental to the porous film's electrical and mechanical properties. In this work, a supercritical fluid (SCF) treatment, performed on a 200 mm tool, was added before the thermal annealing with the intent of improving the dielectric properties. Electrical and mechanical properties were greatly enhanced: the dielectric constant was reduced from 2.5 to 2.1 and the Young's modulus was increased from 2 GPa to 3 GPa. Porogen residue removal and cross-linking improvements were investigated by Fourier Transform Infrared (FTIR) spectroscopy in transmission and multiple internal reflection (MIR) mode.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Weibel, G.L., Ober, C.K., Microelectronic Engineering 65 (2003) 145152.Google Scholar
2 Calvert, J.M., Gallagher, M.K., Semiconductor international (2003) 56.Google Scholar
3 Perrut, V., Clavelier, J.-Y., Lazure, S., Danel, A. and Millet, C., International symposium on supercritical fluids, Versailles, France, 2003.Google Scholar
4 Harrick, N.J., Internal Reflection Spectroscopy, Wiley, New York, 1967.Google Scholar
5 Ciaramella, F., Jousseaume, V., Maitrejean, S., Rémiat, B., Verdier, M. and Passemard, G., Mater. Res. Soc. Symp. Proc. Vol. 863 2005.Google Scholar
6 Klein, L.C., Sol-gel technology for thin films, fibers, preforms, electronics and specialty shapes, Noyes publications.Google Scholar
7 Fadeev, A.Y., McCarthy, T.J., Langmuir (1999) 15, 37593766.Google Scholar
8 Israelachvili, J.N., Gee, M.L., Langmuir (1989), 5, 288289.Google Scholar
9 Rochat, N., Troussier, A., Hoang, A., Vinet, F., Materials Science in Semiconductor Processing 4 (2001).Google Scholar