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Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

Published online by Cambridge University Press:  25 February 2011

H. H. Lamb ,
S. Kalem ,
S. Bedge ,
T. Yasuda ,
Y. Ma  and
G. Lucovsky
H. H. Lamb
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
S. Kalem
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
S. Bedge
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
T. Yasuda
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
Y. Ma
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
G. Lucovsky
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
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Abstract

Ex situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 75
Copyright
Copyright © Materials Research Society 1992

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References

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