Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T17:53:34.311Z Has data issue: false hasContentIssue false

Surface Cleaning Prior to Formation of Si/SiO2 Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD)

Published online by Cambridge University Press:  25 February 2011

H. H. Lamb
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
S. Kalem
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
S. Bedge
Affiliation:
North Carolina State University, Department of Chemical Engineering, Box 7905, Raleigh, NC 27695
T. Yasuda
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
Y. Ma
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
G. Lucovsky
Affiliation:
North Carolina State University, Department of Physics, Box 8202, Raleigh, NC 27695
Get access

Abstract

Ex situ UV/O2 cleaning prior to SiO2 deposition by RPECVD results in an SiO2/Si interface with mid-gap Dit values 2-5 times higher than interfaces formed by in situ exposure of HF-etched wafers to plasma-generated atomic O. In situ exposures to plasma-generated atomic H and atomic O are each effective at removing carbon contamination acquired by the UV/O2 cleaned wafers during transfer and introduction to the RPECVD chamber. However, in situ exposure of the photochemical oxide layer to atomic O results in higher mid-gap Dit values, and in situ exposure to atomic H results in creation of dangling bond defects (Pb centers).

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Vig, J. R., in Treatise on Clean Surface Technology. Vol. 1, edited by Mittal, K. L. (Plenum Press, New York, 1987).Google Scholar
2. Lucovsky, G., Tsu, D. V., Rudder, R. A., and Markunas, R. J., in Thin Film Processes II. edited by Vossen, J. L. and Kern, W. (Academic Press, San Diego, 1991), p. 565.Google Scholar
3. Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, New York, 1982).Google Scholar
4. Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Burrows, V. A., J. Vac. Sci. Technol. A 7, 2104 (1989).CrossRefGoogle Scholar
5. Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar
6. Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Mat. Res. Soc. Proc. 262 (1992) to be published.CrossRefGoogle Scholar
7. Gerardi, G. J., Poindexter, E. H., and Caplan, P. J., Appl. Phys. Lett. 49, 348 (1986).Google Scholar