Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-17T21:26:42.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

Published online by Cambridge University Press:  14 March 2011

M. Nagao ,
H. Tanabe ,
T. Kobayashi ,
T. Matsukawa ,
S. Kanemaru  and
J. Itoh
M. Nagao
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
H. Tanabe
Affiliation:
Dai Nippon Printing Co., Ltd, 250-1 Wakashiba, Kashiwa-shi, Chiba 277-0871, JAPAN
T. Kobayashi
Affiliation:
Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158-8557, JAPAN
T. Matsukawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
S. Kanemaru
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
J. Itoh
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305-8568, JAPAN
Get access

Abstract

Vacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q1.3.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Hirano, T., Kanemaru, S., Tanoue, H., and Itoh, J., Jpn. J. Appl. Phys. 35, 6637 (1996).Google Scholar
2. Jeong, J. W., Ju, B. K., Lee, D. J., Lee, Y. H., Lee, N. Y., Ko, Y. W., Moon, Y. G., Choi, D. J., and Oh, M. H., in Technical Digest of the 11th Int'l Vacuum Microelectronics Conf. (Asheville, U.S.A., 1998), p.42.Google Scholar
3. Kim, H., Ju, B. K., Lee, K. B., Kang, M. S., Jang, J., and Oh, M. H., in Technical Digest of the 11th Int'l Vacuum Microelectronics Conf. (Asheville, U.S.A., 1998), p.67.Google Scholar
4. Ito, F., Konuma, K. and Okamoto, A., J. Vac. Sci. Technol. B16, 783 (1999).Google Scholar
5. Betsui, K., in echnical Digest of the 4th Int'l Vacuum Microelectronics Conf. (Nagahama, Japan, 1991), p.26.Google Scholar
6. Coyle, G. J. Jr., and Oehrlein, G. S., Appl. Phys. Lett. 47, 604 (1985).Google Scholar