Hostname: page-component-669899f699-2mbcq Total loading time: 0 Render date: 2025-04-28T18:08:33.482Z Has data issue: false hasContentIssue false
  • English
  • Français

Theory of the Physical Properties of Si Nanocrystals

Published online by Cambridge University Press:  28 February 2011

M. Lannoo ,
C. Delerue ,
G. Allan  and
E. Martin
M. Lannoo
Affiliation:
IEMN Département ISEN, 41 Bd Vauban, 59046 LILLE Cedex, FRANCE
C. Delerue
Affiliation:
IEMN Département ISEN, 41 Bd Vauban, 59046 LILLE Cedex, FRANCE
G. Allan
Affiliation:
IEMN Département ISEN, 41 Bd Vauban, 59046 LILLE Cedex, FRANCE
E. Martin
Affiliation:
IEMN Département ISEN, 41 Bd Vauban, 59046 LILLE Cedex, FRANCE
Get access

Abstract

This paper reviews calculations concerning several aspects of silicon crystallites and their relevance for porous silicon. This begins with the optical properties of perfect crystallites: gap versus size, radiative recombination time, relative importance of phonon assisted transitions. A second part is devoted to the determination of the excitonic exchange splitting and of the Stokes shift which are found to bring a similar contribution (∼10 to 20 meV). The effect of surface defects like dangling bonds is then investigated with their contribution to the recombination time. The Auger non radiative recombination time is also calculated and found to be short (∼1 nsec). This is confirmed by some experiments on porous silicon which show a saturation effect of the photoluminescence under intense optical excitation or under cathodic polarization in aqueous solution, Auger recombination preventing the existence of more than one electron-hole pair per crystallite. Donor and acceptor impurities are studied in detail (screening of Coulomb potential, notion of ionization energy) with the conclusion that they are ionized. A final discussion shows the present level of understanding and identifies problems remaining to be solved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 13
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Proot, J.P., Delerue, C. and Allan, G., Appl. Phys. Lett. 61,1948 (1992); C. Delerue, G. Allan and M. Lannoo, in Optical Properties of Low Dimensional Silicon Structures edited by D.C. Bensahel, L.T. Canham and S. Ossicini (NATO ASI Series, Kluwer Academic Publishers, 1993) p.229; C. Delerue, G. Allan and M. Lannoo, Phys. Rev. B. 48, 11024 (1993).Google Scholar
3 Bsiesy, A., Vial, J.C., Gaspard, F., Hérino, R., Ligeon, M., Muller, F., Romestain, R., Wasiela, A., Maimaoui, A., and Bomchil, G., Surface Science 254, 195 (1991).Google Scholar
4 Calcott, P.D.J., Nash, K.J., Canham, L.T., Kane, M.J., and Brumhead, D., J. Phys. : Condensed Matter 5, L94 (1993).Google Scholar
5 Sagnes, I., Halimaoui, A., Vincent, G., and Badoz, P.A., Appl. Phys. Lett. 62, 1155 (1993).Google Scholar
6 Meyer, B.K., Hofmann, D.M., Stadler, W., Petrova-Koch, V., Koch, F., Omling, P. and Eman-uelsson, P., Appl. Phys. Lett. 63, 2120 (1993).Google Scholar
7 Allen, P. B., Broughton, J.Q., and McMahan, A.K., Phys. Rev. B 34, 859 (1986).Google Scholar
8 Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., and Muller, F., Appl. Phys. Lett. 59, 304 (1991).Google Scholar
9 Ren, S. Y. and Dow, J. D., Phys. Rev. B 45, 6492 (1992).Google Scholar
10 Steigmeier, E. F., Delley, B., and Auderset, H., Phys. Scr. T 45, 305 (1992).Google Scholar
11 Sanders, G. D. and Chang, Y., Phys. Rev. B 45, 9202 (1992).Google Scholar
12 Ohno, T., Shiraishi, K., and Ogawa, T., Phys. Rev. Lett. 69, 2400 (1992).Google Scholar
13 Read, A.J., Needs, R.J., Nash, K. J., Canham, L. T., Calcott, P.D.J. and Qteish, A., Phys. Rev. Lett. 69, 1232 (1992).Google Scholar
14 Buda, F., Kohanoff, J, and Parrinello, M., Phys. Rev. Lett. 69, 1272 (1992).Google Scholar
15 Takagahara, T. and Takeda, K., Phys. Rev. B 46, 15 578 (1992).Google Scholar
16 Huaxiang, F., Ling, Y, and Xide, X., J. Phys. Condens. Matter 5,1221 (1993).Google Scholar
17 RamaKrishna, M. V. and Friesner, R. A., J. Chem. Phys. 96, 873 (1992).Google Scholar
18 Lin-Wang, Wang and Zunger, A., Phys, J. Chem., to be published.Google Scholar
19 Saunders, W.A., Atawer, H.A., Vahala, K.J., Flagan, R.C., Sercel, P.C., Material Research Society Symposium 283,77 (1993).Google Scholar
20 Takagi, H., Ogawa, H., Yamazaki, Y, Ishizaki, A., Nakagiri, T., Appl.Phys.Lett. 56, 2379 (1990).Google Scholar
21 Littau, K.A., Szajowski, P.J., Muller, A.J., Kortan, A.R., Brus, L.E., J.Phys.Chem. 97,1224 (1993).Google Scholar
22 Schuppler, S., Friedman, S.L, Marcus, M.A, Adler, D.L., Xie, Y.H., Ross, F.M., Harris, T.D., Brown, W.L., Chabal, V.J., Brus, L.E. and Citrin, P.H., Phys. Rev. Lett. 72, 2648 1994).Google Scholar
23 Dexter, D.L, in Solid State Physics, Advances in Research and Applications, edited by Seitz, F. and Turnbull, D. (Academic, New-york, 1958) Vol 6, p 360.Google Scholar
24 Hybertsen, M., Phys. Rev. Lett. 72, 1514 (1994).Google Scholar
25 Lehmann, V. and Gosele, U., Appl. Phys. Lett. 59, 304 (1991).Google Scholar
26 Calcott, P.D.J., Nash, K.J., Canham, L.T., Kane, M.J., and Brumhead, D., in Microcrystalline Semiconductors - Materials Science and Devices, edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I. and Aoyagi, Y. (Mater. Res. Soc. Proc. 283, Pittsburg, PA, 1993) p 143 .Google Scholar
27 Zheng, X.L., Wang, W., Chen, H.C, Appl. Phys. Lett. 60, 986 (1992).Google Scholar
28 Vial, J.C., Bsiesy, A., Fishman, G., Gaspard, F., Hérino, R., Ligeon, M., Muller, F., Romestain, R. and Macfarlane, R.M., Mat. Res. Soc. Symp. Proc. Vol 283, p 241 (1993).Google Scholar
29 Fishman, G.; Romestain, R. and Vial, J.C., Journal de Physique IV, supplément du Journal de Physique II N° 10. Colloque C5, Proc. 3rd Intern. Conf. on Optics of Excitons in Confined Systems, Volume 3, p 355 (1993).Google Scholar
30 Martin, E., Delerue, C., Allan, G. and Lannoo, M., to be published in Phys. Rev. B (Dec. 1994).Google Scholar
31 Allan, G., Delerue, C. and Lannoo, M., Phys. Rev. B 48, 7951, (1993).Google Scholar
32 Brandt, M.S. and Stutzmann, M., Appl. Phys. Lett. 61, 2569 (1992).Google Scholar
33 Von Bardeleben, H.J., Stiévenard, D., Grosman, A., Ortega, C., and Siejka, J., Phys. Rev. B 47, 10 899(1993).Google Scholar
34 Goguenheim, D. and Lannoo, M., J. Appl. Phys 68, 1059 (1990); D. Goguenheim and M. Lannoo, Phys. Rev. B 44, 1724 (1991).Google Scholar
35 Yablonovitch, E. and Gmitter, T., Appl. Phys. Lett. 49, 587 (1986).Google Scholar
36 Landsberg, P. T., in Recombination in Semiconductors (Cambridge University Press, 1991).Google Scholar
37 Mihalcescu, I., Vial, J. C., Bsiesy, A., Muller, F., Romestain, R., Martin, E., Delerue, C., Lannoo, M. and Allan, G., to be published.Google Scholar
38 Vial, J. C., Bsiesy, A., Gaspard, F., Hérino, R., Ligeon, M., Muller, F., Romestain, R., Macfarlane, Phys. Rev. B 45, 14171 (1992).Google Scholar
39 Bsiesy, A., Muller, F., Mihalcescu, I., Ligeon, M., Gaspard, F., Hérino, R., Romestain, R. and Vial, J. C., in Light Emission from Silicon, ed. By Vial, J. C., Canham, L. T. and Lang, W., Lum, J.. 57 (Elsevier North-Holland, 1993) p. 29.Google Scholar
40 Tsu, R. and Babic, D., in Optical properties of low dimensional silicon structures, Ben-sahel, D.C., Canham, L.T. and Ossicini, S. Eds NATO, ASI Series (Kluwer Academic Publishers, Dordrecht 1993).Google Scholar
41 Allan, G., Delerue, C. and Lannoo, M., to be published.Google Scholar
42 Wang, L. W. and Zunger, A., Phys. Rev. Lett. 73, 1039 (1994).Google Scholar