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Thermal Stability and Electrical Properties of Ag(Al)Metallization

Published online by Cambridge University Press:  17 March 2011

Hyunchul C. Kim ,
N. David Theodore ,
James W. Mayer  and
Terry L. Alford
Hyunchul C. Kim
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
N. David Theodore
Affiliation:
Digital DNATM Labs., Motorola Inc., 2100 E. Elliot Rd. MD-EL622, Tempe, AZ, 85284, U.S.A
James W. Mayer
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Terry L. Alford
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
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Abstract

The thermal stability and electrical resistivity of Ag(Al) alloy thin filmson SiO2 are investigated and compared to pure Ag thin films byperforming various analyses: Rutherford backscattering spectrometry (RBS),X-ray diffractometry (XRD), transmission electron microscopy (TEM), andfour-point probe. The susceptibility to agglomeration of Ag on SiO2 layer is a drawback of Ag metallization. Ag(Al) thinfilms show good thermal stability on SiO2 layer without anydiffusion barrier. The films are stable up to 600 °C for 1 hour in vacuum.Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightlyhigher than that of pure Ag thin film. However, the resistivity of Ag(Al)samples annealed at high temperatures (up to 600 °C for 1 hour in vacuum)remains constant due to the improvement of thermal stability (largereduction of agglomeration). This finding can impact metallization for thinfilm transistors (TFT) for displays, including flexible displays, andhigh-speed electronics due to lower resistivity value compared to Cu thinfilm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.24
Copyright
Copyright © Materials Research Society 2004

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References

1. Kim, H. C., Alford, T. L., and Allee, D. R., Appl. Phys. Lett. 81, 4287 (2002).CrossRefGoogle Scholar
2. Nguyen, P., Zeng, Y., and Alford, T. L., J. Vac. Sci. Technol. B 19, 158 (2001).CrossRefGoogle Scholar
3. Gadre, Kaustubh. S. and Alford, T. L., J. Vac. Sci. Technol. B 18, 2814 (2000).CrossRefGoogle Scholar
4. Lee, J. -H., Lee, S. -H., Yoo, K. -L., Kim, N. -Y., and Hwangbo, C. K., Surf. Coat. Technol. 158–159, 477 (2002).CrossRefGoogle Scholar
5. Fahland, M., Karlsson, P., and Charton, C., Thin Solid Films 392, 334 (2001).CrossRefGoogle Scholar
6. Seemann, R., Herminghaus, S., and Jacobs, K., Phys. Rev. Lett. 86, 5534 (2001).Google Scholar
7. Pennetta, C., Reggiani, L., and Trefán, G., Phys. Rev. Lett. 84, 5006 (2001).CrossRefGoogle Scholar
8. Nolan, T. P., Sinclair, R., and Beyers, R., J. Appl. Phys. 71, 720 (1992).CrossRefGoogle Scholar
9. Alford, T. L., Chen, Lingui, and Gadre, Kaustubh S., Thin Solid Films 429, 248 (2003).Google Scholar
10. Doolittle, L. R., Nucl. Instrum. Methods, Phys. Res. B 9, 344 (1985).CrossRefGoogle Scholar
11. Kim, H. C., Theodore, N. D., and Alford, T. L., in press J. Appl. Phys. (2004).Google Scholar