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Thermal Stability of GaAs/InGaP and InGaP/(In)GaAs Interfaces

Published online by Cambridge University Press:  15 February 2011

F. Hyuga ,
T. Nittono ,
K. Watanabe  and
T. Furuta
F. Hyuga
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa, 243-01 Japan, hyuga@aecl.ntt.jp
T. Nittono
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa, 243-01 Japan, hyuga@aecl.ntt.jp
K. Watanabe
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa, 243-01 Japan, hyuga@aecl.ntt.jp
T. Furuta
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa, 243-01 Japan, hyuga@aecl.ntt.jp
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Abstract

Thermal stabilities of GaAs/InGaP and InGaP/(In)GaAs interfaces are investigated using InGaP/(In)GaAs/InGaP single quantum wells. Annealing is performed at a temperature range between 600 and 900 °C for 10 min. Positions and the full widths at half maximum (FWHM) of photoluminescence (PL) peaks are almost identical to those of as-grown ones up to 800 °C. Blue shifts of PL peaks and increased widths of their FWHM observed after 900 °C annealing are suppressed by shortening the annealing time to 0.1 sec. Annealing at 900 ‘C for 0.1 sec is sufficient to activate Si ions implanted into (In)GaAs layers. As a result, these thermal stabilities are able to provide high reliability and high performance of InGaP/(In)GaAs heterostructure MESFET ICs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 37
Copyright
Copyright © Materials Research Society 1996

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References

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