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Thin-Film Indium Oxide Doped with Refractory Metals

Published online by Cambridge University Press:  11 February 2011

Yuki Yoshida ,
Chollada Warmsingh ,
Timothy A. Gessert ,
John D. Perkins ,
David S. Ginley  and
Timothy J. Coutts
Yuki Yoshida
Affiliation:
Colorado School of Mines, 1500 Illinois St., Golden, CO 80401, USA
Chollada Warmsingh
Affiliation:
Colorado School of Mines, 1500 Illinois St., Golden, CO 80401, USA
Timothy A. Gessert
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
John D. Perkins
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
David S. Ginley
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
Timothy J. Coutts
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
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Abstract

The electrical and structural properties of sputtered indium oxide (In2O3) thin films doped with Mo, Zr, and Ti were studied. Properties of these films are compared to undoped In2O3 and tin-doped In2O3 (ITO). The as-sputtered films, doped with Mo (IO:Mo), exhibited high mobility (45 cm2V-1s-1). Pulsed laser deposition (PLD) was also used to deposit IO:Mo films. The highest mobility achieved for an as-deposited PLD IO:Mo film deposited onto a glass substrate was 42.7 cm2V-1s-1. However, PLD IO:Mo films deposited on single-crystal yttria-stabilized zirconia (YSZ) substrates exhibited a higher mobility of 53.6 cm2V-1s-1 and a greater degree of structural orientation than the sputtered films. Following post-deposition annealing, both the sputtered films on glass, and the PLD films on YSZ, exhibited improved mobilities of 47 and 66 cm2V-1s-1, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V1.4
Copyright
Copyright © Materials Research Society 2003

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