Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-17T00:37:19.329Z Has data issue: false hasContentIssue false
  • English
  • Français

Transparent Transistor Development

Published online by Cambridge University Press:  01 February 2011

D. Hong ,
N. L. Dehuff ,
R. E. Presley ,
C. L. Munsee ,
J. P. Bender ,
C.-H. Park ,
J. F. Wager  and
D. A. Keszler
D. Hong
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
N. L. Dehuff
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
R. E. Presley
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
C. L. Munsee
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
J. P. Bender
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
C.-H. Park
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, OR 97331–4003
J. F. Wager
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University Corvallis, OR 97331–3211
D. A. Keszler
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, OR 97331–4003
Get access

Abstract

Transparent electronics is an embryonic technology whose objective is the realization of invisible electronic circuits. We have recently reported the fabrication of a novel n-channel transparent thin-film transistor (TTFT). [1] This ZnO-based TTFT is highly transparent and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display. Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The objective of the work reported herein is to summarize some of our recent TTFT electrical performance results. Materials, processing, and device structure details related to these devices appear in future publications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V1.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hoffman, R. L., Norris, B. J., and Wager, J. F., Appl. Phys. Lett. 82, 733 (2003).Google Scholar
2. Carcia, P., McLean, R., Reilly, M., and Nunes, G. Jr, Appl. Phys. Lett. 82, 1117 (2003).Google Scholar
3. Masuda, S., Kitamura, K., Okumura, Y., and Miyatake, S., J. Appl. Phys. 93, 1624 (2003).Google Scholar
4. Nishii, J. et al., Jpn. J. Appl. Phys. 42, L347 (2003).Google Scholar
5. Wager, J. F., Science 300, 1245 (2003).Google Scholar
6. Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003).Google Scholar
7. Norris, B. J., Anderson, J., Wager, J. F., and Keszler, D. A., J. Phys. D. 36, L105 (2003).Google Scholar
8. Shroder, D. K., Semiconductor Material and Device Characterization, 2nd Edition, Wiley, New York (1998).Google Scholar
9. Kang, J. S., Shroder, D. K., and Alvarez, A. R., Solid State Electronics. 32, 679 (1989).Google Scholar