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X-Ray Truncation Rod Analysis Of Cu Thin Films on C-Plane Sapphire

Published online by Cambridge University Press:  15 February 2011

K.S. Chung ,
Hawoong Hong ,
R.D. Aburano ,
J.M. Roesler ,
T. C. Chiang  and
Haydn Chen
K.S. Chung
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
Hawoong Hong
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
R.D. Aburano
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
J.M. Roesler
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
T. C. Chiang
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
Haydn Chen
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 USA
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Abstract

The interfacial structure of room-temperature MBE-grown Cu thin film on c-plane sapphire has been studied by measuring the substrate crystal truncation rod (CTR) using synchrotron radiation. One substrate was annealed in air at 1500°C for 3 hours followed by an anneal in UHV at 1200°C for 30 minutes prior to Cu deposition. CTR from a clean sapphire substrate without Cu coverage was measured as a reference. The annealed substrate showed higher diffracted intensity along the CTR due to changes in surface structure. The terminating sequence of the substrate surface layers have been obtained from intensity profile analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 437: Symposium DD – Applications of Synchrotron Radiation to III , 1996 , 21
Copyright
Copyright © Materials Research Society 1996

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