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Structural characterization of SiGe and SiGe:C heterostructures using a combination of X-ray scattering methods

Published online by Cambridge University Press:  06 March 2012

J. F. Woitok
J. F. Woitok*
Affiliation:
PANalytical B. V., P.O. Box 13, NL-7600 AA Almelo, The Netherlands
*
a)Electronic mail: joachim.woitok@panalytical.com
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Abstract

This study is about the structural properties of SiGe and SiGe:C heteroepitaxial layers on Si (001). The structural characterization is based on the application of complementary information content of X-ray scattering techniques like high-resolution X-ray diffraction (XRD), X-ray reflectivity (XRR), and X-ray diffuse scattering (XDS). One main focus of the analysis is to derive a sample model that sufficiently describes all experimental datasets. In addition, the reliability of parameters extracted by just one single method is discussed. It turned out that XRR is more sensitive to the near surface region, indicating the presence of surface roughness and density gradients that do not significantly affect the XRD pattern.

Type
Technical Articles
Information
Powder Diffraction , Volume 19 , Issue 1 , March 2004 , pp. 49 - 52
Copyright
Copyright © Cambridge University Press 2004

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