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Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers

Published online by Cambridge University Press:  15 July 2004

V. D. Akhmetov ,
H. Richter ,
W. Seifert ,
O. Lysytskiy ,
R. Wahlich ,
T. Müller  and
M. Reiche
V. D. Akhmetov*
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus, Germany
H. Richter
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus, Germany
W. Seifert
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus, Germany
O. Lysytskiy
Affiliation:
IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus, Germany BTU, Universitätsplatz 3-4, 03044 Cottbus, Germany
R. Wahlich
Affiliation:
Wacker Siltronic AG (Present name: Siltronic AG) , PO Box 1140, 84479 Burghausen, Germany
T. Müller
Affiliation:
Wacker Siltronic AG (Present name: Siltronic AG) , PO Box 1140, 84479 Burghausen, Germany
M. Reiche
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
*
akhmetov@tu-cottbus.de
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Abstract

Spatial distribution and properties of oxide were examined in 300 mm nitrogen (N) doped CZ-Si. Experimentally grown materials with N ranging from ~ 1013 cm−3 to 1015 cm−3 were studied by infrared light scattering tomography, scanning infrared microscopy, transmission electron microscopy and electron beam induced current. It was established that an increasing N content improves the uniformity of the radial distribution of precipitates in the bulk of the wafer, the density of precipitates reaching a level of ~ 109 cm−3. The width of the denuded zone varies in the range from $15\;\mu$m to $70\;\mu$m depending on radial position and N doping level. Electron microscopy revealed lower oxide precipitate densities of about 105 to 108 cm−3. The results are interpreted in terms of existence of agglomerates of nanometer size precipitate nuclei and/or by the defect-induced strain relaxation around the precipitates.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 159 - 161
Copyright
© EDP Sciences, 2004

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References

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