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Electrical properties and Kerr effect study of evaporated Fe/Si and Fe/glass thin films
Published online by Cambridge University Press: 30 October 2009
Abstract
Electrical and magnetic properties were studied for evaporated Fe thin films
on glass and Si substrates. These properties were investigated by means of
the four point probe and the magneto-optical Kerr effect techniques.
Rutherford backscattering (RBS) and scanning electron microscopy (SEM)
experiments show no interdiffusion at the interface Fe/Si for these samples.
The electrical resistivity $\rho $ is found to be larger in Fe/glass than in
Fe/Si for the same thickness. Diffusion at the grain boundaries seems to be
the dominant factor in the $\rho $
values in this 6 to 110 nm thickness
range; the reflection coefficient is smaller in Fe/glass (R ≈ 0.40)
than in Fe/Si(100) (R ≈ 0.65). Saturation field and strain values
confirm that Fe films have a stress induced magnetic anisotropy. Coercive
field HC values range from 2.45 Oe for Fe/Si(100) to 17.65 Oe for
Fe/Si(111) for the same Fe thickness (45 nm).
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- © EDP Sciences, 2009
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