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Non-destructive optical methods for assessing defects in production of Si or SiGe materials

Published online by Cambridge University Press:  15 July 2004

V. Higgs ,
N. Laurent ,
C. Fellous  and
D. Dutarte
V. Higgs*
Affiliation:
Accent Optical Technologies UK Ltd, Hemel Hempstead, HP2 7DF, UK
N. Laurent
Affiliation:
Accent Optical Technologies UK Ltd, Hemel Hempstead, HP2 7DF, UK
C. Fellous
Affiliation:
ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles, France
D. Dutarte
Affiliation:
ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles, France
*
victorh@hi-techsci.com
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Abstract

Non-destructive techniques are ideal for process control and process development. They do not involve any special wafer treatment and the wafers can be further processed in the manufacturing line. A relatively new technique that can be applied to materials characterizations is room temperature photoluminescence (RT-PL). Defects can be revealed because of the enhanced non-radiative recombination at the defect site. The efficiency of detecting defects in SiGe was evaluated. Defects could be detected in blanket film SiGe layers, and there was a good correlation with bright field microscopy inspection and laser scanning methods. The effect of ex-situ cleaning, pre-bake and Boron doping conditions have been investigated. The results follow the expected trends, more defects for non-standard processing. The defects detected by RT-PL were confirmed using transmission electron microscopy (TEM). Defects could also be detected in part-processed patterned wafers, giving a direct indication of the material quality in product wafers.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 43 - 48
Copyright
© EDP Sciences, 2004

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References

National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 4300 Steven's Creek boulevard, Suite 271, San Jose, CA., November, 2001
H. C. van de Hulst, Light Scattering by Small Particles (Dover Publications Inc, New York, 1981) 1cm
Chi Au, T. Messina, R. K Goodall, H. R Huff, in Semiconductor Silicon 1998, edited by H. R. Huff et al. (The Electrochem. Soc. Proceedings Series, Pennington NJ, 1998), p. 641
K. Kugimmia., S. Hahn, M. Yamashita, P. R Baustein, K. Takahashi, in Semiconductor Silicon 1990, edited by H. R. Huff et al. (The Electrochem. Soc. Proceedings Series, Pennington NJ, 1990), p. 1052
Nomarski, G., Weill, A. R., Bull. Soc. Franc. Miner. Cryst. 77, 840 (1954)
Moriya, K., Ogawa, T., Philos. Mag. A 44, 1085 (1981) CrossRef
T. Wilson, C. Sheppard, in Theory and Practice of Scanning Optical Microscopy (Academia, London, 1984)
Kidd, P., Booker, G. R., Sirtland, D. J., Appl. Phys. Lett. 51, 1331 (1987) CrossRef
Tajima, M., Appl. Phys. Lett. 32, 719 (1978) CrossRef
M. Tajima, T. Masui T. Abe, in Semiconductor Si 1990, edited by H. R. Huff et al. (The Electrochem. Soc. Proceedings Series, Pennington, NJ, 1990), p. 994
V. Higgs, F. Chin, X. Wang, Y. Kitagawara, Y. Yoshida, in Semiconductor Silicon 1998, edited by H. R. Huff et al. (The Electrochem. Soc. Proceedings Series, Pennington NJ, 1998), p. 1564
Higgs, V., Mat. Res. Soc. Symp. Proc. 588, 129 (2000) CrossRef
V. Higgs, X. Wang, C. J. Vineis, H. Badawi, M. T. Bulsara, 3rd International conference on SiGe(C) epitaxy and heterostructures, 2003, edited by D. Houghton et al.
Kittler, M., Kveder, V. V., Schroter, W., Solid State Phenom. 69, 417 (1999) CrossRef
Kittler, M., Bouillet-Ulhaq, C., Higgs, V., J. Appl. Phys. 78, 4573 (1995) CrossRef
P. Xin, in Semiconductor Silicon 1998, edited by H. R. Huff et al. (The Electrochem. Soc. Proceedings Series, Pennington NJ, 1998), p. 660
Hu, S. M., J. Vac. Sci. Technol. 14, 17 (1977) CrossRef
Beanland, R., Dunstan, D. J., Goodhew, P. J., Adv. Phys. 45, 87 (1996) CrossRef
Matthews, J. W., Blakeslee, A. D., J. Cryst. Growth 27, 118 (1974)
Dodson, B. W., Tsao, J. Y., Appl. Phys. Lett. 51, 1325 (1988) CrossRef
Beanland, R. J., Appl. Phys. 72, 4031 (1992) CrossRef