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Optical and electrical characterization of Ni-doped orthoferrites thin films prepared by sol-gel process

Published online by Cambridge University Press:  25 January 2013

Feroz Ahmad Mir ,
Javid A. Banday ,
Christian Chong ,
Pierre Dahoo  and
Fayaz A. Najar
Feroz Ahmad Mir*
Affiliation:
Department of Physics, National Institute of Technology, Srinagar 190006, India
Javid A. Banday
Affiliation:
Department of Chemistry, National Institute of Technology, Srinagar 190006, India
Christian Chong
Affiliation:
Faculty of Science, Department of Physics, University of Versailles (UVSQ), 45 av. des États-Unis, 78035 Versailles Cedex, France
Pierre Dahoo
Affiliation:
Faculty of Science, Department of Physics, University of Versailles (UVSQ), 45 av. des États-Unis, 78035 Versailles Cedex, France
Fayaz A. Najar
Affiliation:
Department of Physics, University of Kashmir, Srinagar-190006, India
*
ae-mail: famirnit@gmail.com
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Abstract

This paper presents a low-temperature route for producing RFe0.6Ni0.4O3 (where R = Pr, Nd and Sm) thin films by an aqueous inorganic sol-gel process. The films produced were characterized by X-ray diffraction (XRD) for structural, four probes for electrical and UV-vis spectroscopy for optical properties. As-deposited films were amorphous and after annealing them at 650 °C, crystallinity appears and shows an orthorhombic structure. From UV-vis spectroscopy, variation in optical band gap and transmission is seen with change of rare-earth ions. From electrical resistivity measurement, semiconducting behavior is observed. The difference in activation energy is observed. This variation could be due to the orthorhombic distortion caused by size of rare-earth ion and which may impact the Fe-O-Fe or Fe-O-Ni or Ni-O-Ni bond angle, and hence affects the single particle band width in the present system.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 61 , Issue 1 , January 2013 , 10302
Copyright
© EDP Sciences, 2013

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