Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-19T15:27:06.053Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical characterisation of chemically deposited Pb(1−x) Cdx S films and a Pb1−x Cdx S(n)/Si(p) heterojunction

Published online by Cambridge University Press:  14 February 2007

A. Ounissi ,
N. Ouddai  and
S. Achour
A. Ounissi*
Affiliation:
Laboratory of Advanced Electronics, LEA, Department of Electronics, University of Batna, 05000 Batna, Algeria
N. Ouddai
Affiliation:
Laboratory: Chimie et Chimie de l'Environnement, Department of Chemistry, University of Batna, 05000 Batna, Algeria
S. Achour
Affiliation:
Laboratory: Céramiques de Constantine (CC), Department of physics, University of Constantine, 25000 Constantine, Algeria
*
ounissi_abdelhamid@hotmail.com
Get access

Abstract

The optical study of transmission T(λ) and reflection R(λ) spectra has enabled us to determine compounds that possess gaps close to 1.5 eV. The conditions for preparation of a ternary compound whose gap is 1.48 eV have been used to create a Pb1−x Cdx S-n/Si-p heterojunction. The heterojunction thus obtained presented a low yield (0.5%), as determined from the study of the J–V characteristic. In order to improve its efficiency, we have studied the effect of thermal treatment on the prepared heterojunction. X-ray diffraction has been used to determine the variation in the crystalline parameter and the ratio of cadmium in the Pb1−x Cdx S compound, and the dependence of its gap on the cadmium concentration. We have also used the C–V technique to determine the average concentration of impurities in the Pb1−x Cdx S compound.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 3 , March 2007 , pp. 241 - 245
Copyright
© EDP Sciences, 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

R.M. Warner, Circuits intégrés étude et réalisation, traducted by P. Barbier (Dunod, Paris, 1968), p. 353
Nayak, B.B., Acharya, H.N., Mitra, G.B., B. Mater. Sci. 3, 317 (1981) CrossRef
Nayak, B.B., Acharya, H.N., J. Mater. Sci. Lett. 4, 651 (1985) CrossRef
Dawar, A.L., Taneja Partap Kumar, O.P., Mathur, P.C., Thin Solid Films 79, 185 (1981) CrossRef
R.L. Anderson, Solid State Electron. 1.5, 341 (1962)