Hostname: page-component-7dd5485656-tbj44 Total loading time: 0 Render date: 2025-10-29T10:07:02.818Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical properties of size quantized PbSe films chemically deposited on GaAs

Published online by Cambridge University Press:  21 December 2007

M. Shandalov ,
J. P. Makai ,
J. Balazs ,
Z. s. J. Horvath ,
N. Gutman ,
A. Sa'ar  and
Y. Golan
M. Shandalov
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
J. P. Makai
Affiliation:
Research Institute for Technical Physics and Material Science, Hungarian Academy of Science, Budapest, 1121 Konkoly Th. u. 29-33, Hungary
J. Balazs
Affiliation:
Research Institute for Technical Physics and Material Science, Hungarian Academy of Science, Budapest, 1121 Konkoly Th. u. 29-33, Hungary
Z. s. J. Horvath
Affiliation:
Research Institute for Technical Physics and Material Science, Hungarian Academy of Science, Budapest, 1121 Konkoly Th. u. 29-33, Hungary
N. Gutman
Affiliation:
Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Givat Ram, Jerusalem 91904, Israel
A. Sa'ar
Affiliation:
Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Givat Ram, Jerusalem 91904, Israel
Y. Golan*
Affiliation:
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
*
ygolan@bgu.ac.il
Get access

Abstract

PbSe films were chemically deposited with a range of controlled microstructures, from nanocrystalline to monocrystalline films. The crystal size in the nanocrystalline films was controlled in a range 7 to 25 nm with a fairly narrow size distribution, which allowed fine-tuning of the PbSe energy gap. The optical properties of the films were investigated using infrared (IR) transmission and IR photoluminescence measurements. The nanocrystalline PbSe films showed single bandgap values in the technologically important near-IR region. Two bandgap values, corresponding to both bulk and confined nanocrystals, were obtained for films with mixed microstructure. Strong blue shifts in both the absorption and emission peaks of the nanocrystalline layers were obtained. The bandgaps of the PbSe films were found to be in good agreement with theoretical calculations. The results point out the potential of these films for nanoscale optical device applications operating in the near-IR range.

Keywords

Information

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 1 , January 2008 , pp. 75 - 80
Copyright
© EDP Sciences, 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Mahapatra, P., Roy, C., Electrochem. Acta. 29, 1435 (1984) CrossRef
Martin, J., Hernandez, J., Adell, L., Rodriguez, A., Lopez, F., Semicond. Sci. Tech. 11, 1740 (1996) CrossRef
Diezhandino, J., Vergara, G., Perez, G., Genova, I., Rodrigo, M.T., Sanchez, F.J., Torquemada, M.C., Villamayor, V., Plaza, J., Catalan, I., Almazan, R., Verdu, M., Rodriguez, P., Gomez, L.J., Montojo, M.T., Appl. Phys. Lett. 83, 2751 (2003) CrossRef
Shaller, R., Petruska, M., Klimov, V., J. Phys. Chem. B 107, 13765 (2003) CrossRef
G. Hodes, Chemical Solution Deposition of Semiconductor Films (Marcel Dekker, Inc., New York-Basel, 2002)
Osherov, A., Shandalov, M., Ezerski, V., Golan, Y., J. Cryst. Growth 304, 169 (2007). CrossRef
Wise, F., Acc. Chem. Res. 33, 773 (2000) CrossRef
Gorer, S., Albu-Yaron, A., Hodes, G., Chem. Mater. 7, 1243 (1995) CrossRef
Gorer, S., Albu-Yaron, A., Hodes, G., J. Phys. Chem. 99, 16442 (1995) CrossRef
Kumar, S., Khan, Z., Majeed Khan, M., Husain, M., Curr. Appl. Phys. 5, 561 (2005) CrossRef
Lipovskii, A., Kolobkova, E., Petrikov, V., Kang, I., Olkhovets, A., Krauss, T., Thomas, M., Silcox, J., Wise, F., Shen, Q., Kycia, S., Appl. Phys. Lett. 71, 3406 (1997) CrossRef
Wehrenberg, B., Wang, C., Guyot-Sionnest, P., J. Phys. Chem. B 106, 10634 (2002) CrossRef
Chen, F., Stokes, K., Zhou, W., Fang, J., Murray, C., Mat. Res. Soc. Symp. Proc. 691, 359 (2002)
Klimov, V., Mikhailovsky, A., Xu, S., Malko, A., Hollingsworth, J., Leatherdale, C., Eisler, H., Bawendi, M., Science 290, 314 (2000) CrossRef
Kazes, M., Lewis, D., Ebenstein, Y., Mokari, T., Banin, U., Adv. Mater. 14, 317 (2002) 3.0.CO;2-U>CrossRef
Schaller, R., Klimov, V., Phys. Rev. Lett. 92, 186601 (2004) CrossRef
Ellingson, R., Beard, M.C., Johnson, J.C., Yu, P., Micic, O.I., Nozik, A.J., Shabaev, A., Efros, A.L., Nano Lett. 5, 865 (2005) CrossRef
Shandalov, M., Golan, Y., Eur. Phys. J. Appl. Phys. 24, 13 (2003) CrossRef
Shandalov, M., Golan, Y., Eur. Phys. J. Appl. Phys. 28, 51 (2004) CrossRef
Shandalov, M., Golan, Y., Eur. Phys. J. Appl. Phys. 31, 27 (2005) CrossRef
Shandalov, M., Golan, Y., Chem. Mater. 18, 3593 (2006) CrossRef
Wang, Y., Suna, A., Mahler, W., Kasowski, R., J. Chem. Phys. 87, 7315 (1987) CrossRef