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Simulation of surface morphology and defects in heteroepitaxied thin films

Published online by Cambridge University Press:  15 March 2001

M. Sahlaoui ,
A. Ayadi ,
N. Fazouan ,
M. Addou ,
M. Djafari Rouhani  and
D. Estève
M. Sahlaoui*
Affiliation:
LPMC, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, BP 20, El jadida, Morocco LPC, Département de Physique, Faculté des Sciences et Techniques, BP 523, Béni Mellal, Morocco
A. Ayadi
Affiliation:
LPMC, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, BP 20, El jadida, Morocco
N. Fazouan
Affiliation:
Département de Physique, Faculté des Sciences, Université ibn Tofl, Kénitra, Morocco
M. Addou
Affiliation:
Département de Physique, Faculté des Sciences, Université ibn Tofl, Kénitra, Morocco
M. Djafari Rouhani
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France LAAS, CNRS, 7 avenue Colonel Roche, 31077 Toulouse Cedex, France
D. Estève
Affiliation:
LAAS, CNRS, 7 avenue Colonel Roche, 31077 Toulouse Cedex, France
*
sahlaoui@fstbm.ac.ma
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Abstract

We have performed atomic scale simulations of heteroepitaxial growth of thin films using the valence force field approximation and Monte Carlo techniques. The case of CdTe/(001)GaAs is considered. Our simulations indicate valley formation presenting (111) facets with unstable bottoms in the early stages of the growth. This roughening is a source of dislocation, as it appears to relax the elastic energy of the deposited layers by formation of V-grooves. We have used a calculated RHEED as an in situ control of deposited layers. Finally, we present the influence of an imperfect surface in the morphology of the deposited films.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 13 , Issue 3 , March 2001 , pp. 171 - 176
Copyright
© EDP Sciences, 2001

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