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Structural and optical properties of silicon nitride film generated on Si substrate by low energy ion implantation

Published online by Cambridge University Press:  28 March 2008

D. Dorranian ,
P. Azadfar ,
A. H. Sari ,
S. Ghorbani ,
A. Hojabri  and
M. Ghoranneviss
D. Dorranian*
Affiliation:
Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, Tehran, Iran,
P. Azadfar
Affiliation:
Physics Department, Islamic Azad University, Karaj Branch, Karaj, Iran
A. H. Sari
Affiliation:
Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, Tehran, Iran,
S. Ghorbani
Affiliation:
Physics Department, Islamic Azad University, Karaj Branch, Karaj, Iran
A. Hojabri
Affiliation:
Physics Department, Islamic Azad University, Karaj Branch, Karaj, Iran
M. Ghoranneviss
Affiliation:
Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, Tehran, Iran,
*
doran@srbiau.ac.ir
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Abstract

In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at various ion beam fluency varied from 1016 to 1018 ions/cm2 and the results are investigated. Si3N4 film with orthorhombic structure is formed on silicon surface with cubic structure while the lattice parameter of the generated layer is not affected by change of nitrogen ion beam dose. RMS roughness of implanted samples increases by increasing the nitrogen dose, specially when the dose is more than 3×1017 ions/cm2. Surface resistivity of samples is increased by increasing the dose of ion beam. Although changes in the transmission of implanted samples does not differ very much in comparison with row sample but reflection of implanted samples decrease about 60% for the electromagnetic wave in the range of 200 to 1500 nm. Absorption coefficient of samples is obtained and the band gap energy of samples is calculated. It is observed that formation of defect levels changes the magnitude of band gap energy.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 42 , Issue 2 , May 2008 , pp. 103 - 107
Copyright
© EDP Sciences, 2008

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References

Fang, C.M., Hintzen, H.T., With, G., Groot, R.A., J. Phys. Condens. Matter 13, 67 (2001) CrossRef
Kim, K.J., Kang, T.H., Ihm, K., Jeon, C., Hwang, C.C., Kim, B., Surf. Sci. 600, 3496 (2006) CrossRef
Shokouhy, A., Larijani, M.M., Ghoranneviss, M., Haji Hosseini, S.H., Yari, M., Sari, A.H., Gholipur Shahraki, M., Thin Solid Films 550, 571 (2006) CrossRef
Rignance, G.M., Pasqurello, A., Surf. Sci. 490, L614 (2001) CrossRef
Otto, G., Hobler, G., Palmetshofer, L., Mayerhofer, K., Piplits, K., Hutter, H., Nucl. Instrum. Methods in Phys. Res. B 242, 667 (2006) CrossRef
Zhang, G.A., Yan, P.X., Wang, P., Chen, Y.M., Zhang, J.Y., Mater. Sci. Engineer. A 460, 301 (2007) CrossRef
Paloura, E.C., Lioutas, C., Markwitz, A., J. Appl. Phys. 80, 2720 (1996) CrossRef
Rudolphi, M., Markwitz, A., Baumann, H., Surf. Interface Anal. 39, 698 (2007) CrossRef
Ben Achour, Z., Ktari, T., Quertani, B., Touayar, O., Bessais, B., Ben Brahim, J., Sens. Actuat. A 134, 447 (2007) CrossRef
Thakur, S., Sahoo, N.K., Senthilkumar, M., Tokas, R.B., Opt. Mater. 27, 1402 (2005) CrossRef
B.G. Streetman; Solid State Electronic Devices, 3rd edn. (Prentice Hall Inc., New Jersey, 1990)
J.I. Pankove; Optical Process in Semiconductors, 1st edn. (Prentice Hall Inc., New Jersey, 1971)