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Thermally induced changes in optical and electrical properties of SnSb2S4 thin films

Published online by Cambridge University Press:  06 February 2008

A. Gassoumi ,
M. Kanzari  and
B. Rezig
A. Gassoumi
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs - ENIT BP 37, Le belvédère 1002-Tunis, Tunisia
M. Kanzari*
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs - ENIT BP 37, Le belvédère 1002-Tunis, Tunisia
B. Rezig
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs - ENIT BP 37, Le belvédère 1002-Tunis, Tunisia
*
mounir.kanzari@ipeit.rnu.tn
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Abstract

Sulfosalt SnSb2S4 films for optical and electrical applications have been prepared on glass substrates by thermal evaporation and subsequently thermally annealed in vacuum at temperatures from 100 to 200 °C. The optical and structural properties of the films were studied as a function of the annealing temperature. The SnSb2S4 films exhibit a polycrystalline structure and undergo abrupt changes in electrical and optical properties at a transition temperature of 140 °C. After annealing below the transition temperature, the films are highly resistive with a dominant amorphous component, but when annealed above this temperature, the samples exhibit p+-type semiconductor behaviour with a dominant crystalline component

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 2 , February 2008 , pp. 91 - 95
Copyright
© EDP Sciences, 2008

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