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Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films

Published online by Cambridge University Press:  23 December 2010

A. Yildiz ,
N. Serin  and
T. Serin
A. Yildiz*
Affiliation:
Department of Physical Engineering, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040 Kirsehir, Turkey
N. Serin
Affiliation:
Department of Physical Engineering, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
T. Serin
Affiliation:
Department of Physical Engineering, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey
*
yildizab@gmail.com
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Abstract

The temperature dependence of the electrical conductivity before and after gamma irradiation of hydrogenated amorphous silicon (a-Si:H) films, prepared by the hot wire method, at a dose of 2 kGy of 60Co gamma irradiation are presented and discussed. Fourier transform infrared spectroscopy (FTIR) measurements provide useful information on the characteristics of bond configurations in a-Si:H before and after gamma irradiation. The conductivity increased and the bond configurations changed significantly after gamma irradiation. The results are explained by the filling of shallow donor states and variation of bond type due to migration of hydrogen atoms under the effect of irradiation. The behaviour of the conductivity is consistent with a hopping mechanism. The temperature dependence of the conductivity of a-Si:H exhibits a $T^{-1/4}$ law, instead of the $T^{-1/2}$ law, after gamma irradiation.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 1 , January 2011 , 10502
Copyright
© EDP Sciences, 2010

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References

Crandall, R.S., Williams, R., Tompkins, B.E., J. Appl. Phys. 50, 5506 (1979) CrossRef
Zimcik, D.G., Wertheimert, M.R., Balmain, K.B., Tennyson, R., J. Spacecr. Rockets 28, 652 (1991) CrossRef
Liu, X., Shaw, C.C., Med. Phys. 31, 98 (2003) CrossRef
Kolodziej, A., Opto-Electron. Rev. 12, 21 (2004)
Golikova, O.A., Semiconductors 31, 228 (1997) CrossRef
Gunes, M., Wronski, C.R., J. Appl. Phys. 81, 3526 (1997) CrossRef
Gunes, M., Wronski, C.R., McMahon, T.J., J. Appl. Phys. 76, 2260 (1994) CrossRef
Ablova, M.S., Kulikov, G.S., Persheev, S.K., Semiconductors 36, 936 (2002) CrossRef
Serin, T., Serin, N., Appl. Phys. A 59, 431 (1994) CrossRef
Staebler, D.L., Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977) CrossRef
Gibbons, J.F., Proc. IEEE 60, 1062 (1972) CrossRef
Imagawa, O., Yasuda, K., Yoshida, A., J. Appl. Phys. 66, 4719 (1989) CrossRef
Schneider, U., Schröeder, B., Finger, F., J. Non-Cryst. Solids 97-98, 795 (1987) CrossRef
Britton, D.T., Sigcau, Z., Comrie, C.M., Kanguwe, D.F., Minani, E., Knoesen, D., Harting, M., Thin Solid Films 430, 149 (2003) CrossRef
Street, R., Zesch, J., Thompson, M.J., Appl. Phys. Lett. 43, 672 (1983) CrossRef
Yildiz, A., Serin, N., Serin, T., Kasap, M., Jpn J. Appl. Phys. 48, 111203 (2009) CrossRef
Yildiz, A., Lisesivdin, S.B., Kasap, M., Mardare, D., J. Non-Cryst. Solids 354, 4944 (2008) CrossRef
Brodsky, M.H., Cardona, M., Cuomo, J.J., Phys. Rev. B 16, 3556 (1977) CrossRef
Meng, X.T., Xiong, J.W., Qin, G.G., Du, Y.C., Phys. Scr. 52, 108 (1995) CrossRef
Branz, H.M., Phys. Rev. B 59, 5498 (1999) CrossRef
Ablova, M.S., Kulikov, G.S., Persheev, S.K., Semiconductors 32, 222 (1998) CrossRef
Yamasaki, S., Umeda, T., Isoya, J., Zhou, J.H., Tanaka, K., J. Non-Cryst. Solids 227, 332 (1998) CrossRef
Coffa, S., Priolo, F., Battaglia, A., Phys. Rev. Lett. 70, 3756 (1993) CrossRef
Winer, K., Phys. Rev. B 41, 12150 (1990) CrossRef
N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1971)
Svavarsson, H.G., Gudmundsson, J.T., Gislason, H.P., Phys. Rev. B 67, 205213 (2003) CrossRef
A.L. Efros, B.I. Shklovskii, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984)
Zabrodskii, A.G., Zinoveva, K.N., Phys. JETP 59, 425 (1984)
R.A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991)
Shklovskii, B.I., Sov. Phys. Semicond. 6, 1053 (1973)