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Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method

Published online by Cambridge University Press:  25 May 2012

B.B. Li ,
L. Lin ,
H.L. Shen ,
F.E. Boafo ,
Z.F. Chen ,
B. Liu  and
R. Zhang
B.B. Li*
Affiliation:
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China Department of Physics, Nanjing University, Nanjing 210093, P.R. China
L. Lin
Affiliation:
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
H.L. Shen
Affiliation:
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
F.E. Boafo
Affiliation:
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
Z.F. Chen
Affiliation:
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
B. Liu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
*
ae-mail: bbli@nuaa.edu.cn
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Abstract

N-doped Cu2O thin films have been deposited on glass substrate by reactive magnetron sputtering method under various N2/O2 flow ratios from 0 to 1.0. The structural and electronic properties of Cu2O:N films were investigated by X-ray diffraction (XRD), four-point probe and Hall effect measurements. XRD pattern showed that crystalline structures of all the samples retained single phase of Cu2O with the increase of N2/O2 flow ratio from 0 to 1.0. However, the crystalline quality of Cu2O:N films reduced with the increase of the N2/O2 flow ratio. The phenomenon of peak shift of Cu2O(1 1 1) implied that N atoms have been doped into Cu2O film. The square resistance of Cu2O:N films linearly decreased from 28.1 to 1.5 (104 Ω/☐) with the increase of N2/O2 flow ratio from 0.2 to 0.6 initially, and then it changed slowly with the increase of N2/O2 flow ratio from 0.8 to 1.0. Hole density of Cu2O:N films with various N2/O2 flow ratios from 0 to 0.6 was measured using the Van der Pauw method. All the samples are p-type, and the hole density of Cu2O:N films was enhanced from 1.2 × 1016 cm−3 to 3.1 × 1019 cm−3 with the increase of N2/O2 flow ratio from 0 to 0.6. The experimental results demonstrated that N doping was an effective method to enhance hole density of p-type Cu2O film.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 58 , Issue 2 , May 2012 , 20303
Copyright
© EDP Sciences, 2012

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