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Solar blind AlGaN photodetectors with a very high spectral selectivity

Published online by Cambridge University Press:  18 January 2006

J.-Y. Duboz ,
N. Grandjean ,
A. Dussaigne ,
M. Mosca ,
J.-L. Reverchon ,
P. G. Verly  and
R. H. Simpson
J.-Y. Duboz*
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
N. Grandjean
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
A. Dussaigne
Affiliation:
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
M. Mosca
Affiliation:
THALES Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
J.-L. Reverchon
Affiliation:
THALES Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
P. G. Verly
Affiliation:
Institute for Microstructural sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
R. H. Simpson
Affiliation:
Institute for Microstructural sciences, National Research Council, Ottawa K1A 0R6, Ontario, Canada
*
jyd@crhea.cnrs.fr
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Abstract

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 × 104, and better than 5 × 104, measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.

Keywords

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 33 , Issue 1 , January 2006 , pp. 5 - 7
Copyright
© EDP Sciences, 2006

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References

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