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A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet

Published online by Cambridge University Press:  15 January 1999

M. A. Grado-Caffaro  and
M. Grado-Caffaro
M. A. Grado-Caffaro
Affiliation:
C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
M. Grado-Caffaro
Affiliation:
C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
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Abstract

A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.

Keywords

Type
Rapid Communication
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 1 , January 1999 , pp. 1 - 2
Copyright
© EDP Sciences, 1999

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References

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