Plasma processing is an approach to modify the surface structure for improved performance of nitride semiconductor using in light emitting diodes. In this work, RF sputtered GaN thin films were synthesized on Si (1 0 0) substrates and processed at two different plasmas (N2 and O2) at various flow rates. The surface nature of plasma processed thin films was characterized using atomic force microscope (AFM) and scanning electron microscope (SEM). Energy dispersive spectrum (EDS) of all samples was recorded to do elemental analysis. Noticeable changes on surface morphology were recorded for the plasma processed GaN thin films at high flow rate (>20 sccm). The roughness and particle size of thin film got decreased as the flow rate of gases increased. Low value in surface roughness (0.26 nm) and particles size (14 nm) was observed at 30 sccm flow rate of O2. SEM images also revealed the surface modification at high gas flow rates during plasma process. Nitrogen deficient GaN thin film was confirmed by EDS spectra and improved N2 concentration was achieved for N2 and O2 plasma processing upto 20 sccm flow rates. I-V characteristics showed the Schottky-contact behavior for all thin films and revealed the improved surface quality to make good ohmic contact for the film processed at high gas flow rate (>30 sccm).