Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-15T19:16:25.701Z Has data issue: false hasContentIssue false

14 - Electronic Properties and Strain Engineering in Semiconducting Transition Metal Dichalcogenides

from Part II

Published online by Cambridge University Press:  22 June 2017

By
Rafael Roldán  and
Francisco Guinea
Edited by
Phaedon Avouris ,
Tony F. Heinz  and
Tony Low
Phaedon Avouris
Affiliation:
IBM T. J. Watson Research Center, New York
Tony F. Heinz
Affiliation:
Stanford University, California
Tony Low
Affiliation:
University of Minnesota
Get access
Type
Chapter
Information
2D Materials
Properties and Devices
 , pp. 259 - 278
Publisher: Cambridge University Press
Print publication year: 2017

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

14.7 References

Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., and Geim, A. K., Proceedings of the National Academy of Sciences of the United States of America 111, 6198; 102, 10451 (2005).Google Scholar
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., and Strano, M. S., Nature Nanotechnology 7, 699 (2012).CrossRefGoogle Scholar
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., and Hersam, M. C., ACS Nano 8, 1102 (2014).Google Scholar
Ganatra, R. and Zhang, Q., ACS Nano 8, 4074 (2014).Google Scholar
Cappelluti, E., Roldán, R., Silva-Guillén, J. A., Ordejón, P., and Guinea, F., Physical Review B 88, 075409 (2013).Google Scholar
Mak, K. F., Lee, C., Hone, J., Shan, J., and Heinz, T. F., Physical Review Letters 105, 136805 (2010).Google Scholar
Zhao, W., Ribeiro, R. M., Toh, M., Carvalho, A., Kloc, C., Castro Neto, A. H., and Eda, G., Nano Letters 13, 5627 (2013).Google Scholar
Jin, W., Yeh, P.-C., Zaki, N., Zhang, D., Sadowski, J. T., Al-Mahboob, A., van der Zande, A. M., Chenet, D. A., Dadap, J. I., Herman, I. P., et al., Physical Review Letters 111, 106801 (2013).CrossRefGoogle Scholar
Zhang, Y., Chang, T.-R., Zhou, B., Cui, Y.-T., Yan, H., Liu, Z., Schmitt, F., Lee, J., Moore, R., Chen, Y., et al., Nature Nanotechnology 9, 111 (2014).Google Scholar
Castellanos-Gomez, A., Cappelluti, E., Roldán, R., Agraït, N., Guinea, F., and Rubio-Bollinger, G., Advanced Materials 25, 899 (2013).Google Scholar
Feng, J., Qian, X., Huang, C.-W., and Li, J., Nature Photonics 6, 866 (2012).Google Scholar
Lu, P., Wu, X., Guo, W., and Zeng, X. C., Physical Chemistry Chemical Physics 14, 13035 (2012).Google Scholar
Pan, H. and Zhang, Y.-W., The Journal of Physical Chemistry C 116, 11752 (2012).Google Scholar
Peelaers, H. and Van de Walle, C. G., Physical Review B 86, 241401 (2012).Google Scholar
Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V., and Stesmans, A., Physica E: Low-dimensional Systems and Nanostructures 56, 416 (2014).Google Scholar
Scalise, E., Houssa, M., Pourtois, G., Afanas’ev, V., and Stesmans, A., Nano Research 5, 43 (2012).Google Scholar
Yun, W. S., Han, S., Hong, S. C., Kim, I. G., and Lee, J., Physical Review B 85, 033305 (2012).Google Scholar
Li, Y., Li, Y.-L., Araujo, C. M., Luo, W., and Ahuja, R., Catalysis Science and Technology 3, 2214 (2013).Google Scholar
Ghorbani-Asl, M., Borini, S., Kuc, A., and Heine, T., Physical Review B 87, 235434 (2013).Google Scholar
Shi, H., Pan, H., Zhang, Y.-W., and Yakobson, B. I., Physical Review B 87, 155304 (2013).Google Scholar
Hromadová, L., Martoňák, R., and Tosatti, E., Physical Review B 87, 144105 (2013).Google Scholar
Horzum, S., Sahin, H., Cahangirov, S., Cudazzo, P., Rubio, A., Serin, T., and Peeters, F. M., Physical Review B 87, 125415 (2013).Google Scholar
Castellanos-Gomez, A., Roldán, R., Cappelluti, E., Buscema, M., Guinea, F., van der Zant, H. S. J., and Steele, G. A., Nano Letters 13, 5361 (2013).Google Scholar
Zhu, Z. Y., Cheng, Y. C., and Schwingenschlögl, U., Physical Review B 84, 153402 (2011).Google Scholar
Xiao, D., Liu, G.-B., Feng, W., Xu, X., and Yao, W., Physical Review Letters 108, 196802 (2012).Google Scholar
Xu, X., Yao, W., Xiao, D., and Heinz, T. F., Nature Physics 10, 343 (2014).Google Scholar
Roldán, R., López-Sancho, M., Guinea, F., Cappelluti, E., Silva-Guillén, J., and Ordejón, P., 2D Materials 1, 034003 (2014).Google Scholar
Cao, T., Wang, G., Han, W., Ye, H., Zhu, C., Shi, J., Niu, Q., Tan, P., Wang, E., Liu, B., et al., Nature Communications 3, 887 (2012).Google Scholar
Zeng, H., Dai, J., Yao, W., Xiao, D., and Cui, X., Nature Nanotechnology 7, 490 (2012).Google Scholar
Mak, K. F., He, K., Sahn, J., and Heinz, T. F., Nature Nanotechnology 7, 494 (2012).Google Scholar
Wu, S., Ross, J. S., Liu, G.-B., Aivazian, G., Jones, A., Fei, Z., Zhu, W., Xiao, D., Yao, W., Cobden, D., et al., Nature Physics 9, 149 (2013).Google Scholar
Wang, Q., Ge, S., Li, X., Qiu, J., Ji, Y., Feng, J., and Sun, D., ACS Nano 7, 11087 (2013).CrossRefGoogle Scholar
Zeng, H., Liu, G.-B., Dai, J., Yan, Y., Zhu, B., He, R., Xie, L., Xu, S., Chen, X., Yao, W., et al., Scientific Reports 3, 1608 (2013).Google Scholar
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., and Shan, J., Nature Mat. 12, 207 (2013).Google Scholar
Sallen, G., Bouet, L., Marie, X., Wang, G., Zhu, C. R., Han, W. P., Lu, Y., Tan, P. H., Amand, T., Liu, B. L., et al., Physical Review B 86, 081301 (2012).CrossRefGoogle Scholar
Ochoa, H. and Roldán, R., Physical Review B 87, 245421 (2013).Google Scholar
Roldán, R., Castellanos-Gomez, A., Cappelluti, E., and Guinea, F., Journal of Physics: Condensed Matter 27, 313201 (2015).Google Scholar
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al., Nature 514, 470 (2014).Google Scholar
Roldán, R., Silva-Guillén, J. A., López-Sancho, M. P., Guinea, F., Cappelluti, E., and Ordejón, P., Annalen der Physik 526, 347 (2014).Google Scholar
Liu, G.-B., Shan, W.-Y., Yao, Y., Yao, W., and Xiao, D., Physical Review B 88, 085433 (2013).CrossRefGoogle Scholar
Kośmider, K., González, J. W., and Fernández-Rossier, J., Physical Review B 88, 245436 (2013).Google Scholar
Kumar, A. and Ahluwalia, P., The European Physical Journal B 85, 1 (2012).Google Scholar
Ye, J. T., Zhang, Y. J., Akashi, R., Bahramy, M. S., Arita, R., and Iwasa, Y., Science 338, 1193 (2012).Google Scholar
Taniguchi, K., Matsumoto, A., Shimotani, H., and Takagi, H., Applied Physics Letters 101, 042603 (2012).Google Scholar
Lu, J. M., Zheliuk, O., Leermakers, I., Yuan, N. F. Q., Zeitler, U., Law, K. T., and Ye, J. T., Science 350, 1353 (2015).Google Scholar
Saito, Y., Nakamura, Y., Bahramy, M. S., Kohama, Y., Ye, J., Kasahara, Y., Nakagawa, Y., Onga, M., Tokunaga, M., Nojima, T., et al., Nature Physics 12, 144 (2016).Google Scholar
Roldán, R., Cappelluti, E., and Guinea, F., Physical Review B 88, 054515 (2013).Google Scholar
Yuan, J. and Honerkamp, C., ArXiv e-prints (2015), 1504.04536.Google Scholar
Rösner, M., Haas, S., and Wehling, T. O., Physical Review B 90, 245105 (2014).Google Scholar
Yuan, N. F. Q., Mak, K. F., and Law, K. T., Physical Review Letters 113, 097001 (2014).Google Scholar
Rostami, H., Moghaddam, A. G., and Asgari, R., Physical Review B 88, 085440 (2013).Google Scholar
Kormányos, A., Zólyomi, V., Drummond, N. D., Rakyta, P., Burkard, G., and Fal’ko, V. I., Physical Review B 88, 045416 (2013).Google Scholar
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., and Wang, F., Nano Letters 10, 1271 (2010).Google Scholar
Slater, J. C. and Koster, G. F., Physical Review 94, 1498 (1954).CrossRefGoogle Scholar
Rostami, H., Roldán, R., Cappelluti, E., Asgari, R., and Guinea, F., Physical Review B 92, 195402 (2015).Google Scholar
Yuan, S., Roldán, R., Katsnelson, M. I., and Guinea, F., Physical Review B 90, 041402 (2014).Google Scholar
de Juan, F., Mañes, J. L., and Vozmediano, M. A. H., Physical Review B 87, 165131 (2013).Google Scholar
Kitt, A. L., Pereira, V. M., Swan, A. K., and Goldberg, B. B., Physical Review B 85, 115432 (2012).Google Scholar
Suzuura, H. and Ando, T., Physical Review B 65, 235412 (2002).Google Scholar
Pereira, V. M., Castro Neto, A. H., and Peres, N. M. R., Physical Review B 80, 045401 (2009).Google Scholar
Cappelluti, E. and Profeta, G., Physical Review B 85, 205436 (2012).Google Scholar
Harrison, W. A., Elementary Electronic Structure (World Scientific, 1999).Google Scholar
Winkler, R., Spin–Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems, 191 (Springer Science & Business Media, 2003).Google Scholar
Amorim, B., Cortijo, A., de Juan, F., Grushin, A. G., Guinea, F., Gutiérrez-Rubio, A., Ochoa, H., Parente, V., Roldán, R., San-José, P., et al., Physics Reports 617, 1 (2016).Google Scholar
Griffith, A. A., Philosophical Transactions of the Royal Society of London 221, 63 (1921).Google Scholar
Munguía, J., Bremond, G., Bluet, J. M., Hartmann, J. M., and Mermoux, M., Applied Physics Letters 93, 102101 (2008).Google Scholar
Li, H., Contryman, A. W., Qian, X., Ardakani, S. M., Gong, Y., Wang, X., Weisse, J. M., Lee, C. H., Zhao, J., Ajayan, P. M., et al., Nature Communications 6, 7381 (2015).Google Scholar
Molina-Sánchez, A. and Wirtz, L., Physical Review B 84, 155413 (2011).Google Scholar
Lee, C., Yan, H., Brus, L. E., Heinz, T. F., Hone, J., and Ryu, S., ACS Nano 4, 2695 (2010).Google Scholar
Conley, H. J., Wang, B., Ziegler, J. I., Haglund, R. F., Pantelides, S. T., and Bolotin, K. I., Nano Letters 13, 3626 (2013).Google Scholar
Hui, Y. Y., Liu, X., Jie, W., Chan, N. Y., Hao, J., Hsu, Y.-T., Li, L.-J., Guo, W., and Lau, S. P., ACS Nano 7, 7126 (2013).Google Scholar
Rice, C., Young, R. J., Zan, R., Bangert, U., Wolverson, D., Georgiou, T., Jalil, R., and Novoselov, K. S., Physical Review B 87, 081307 (2013).Google Scholar

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×