Skip to main content Accessibility help
×
Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-15T23:40:36.475Z Has data issue: false hasContentIssue false

4 - LCP for wafer-level chip-scale MEMS

Published online by Cambridge University Press:  05 July 2012

Anh-Vu H. Pham
Affiliation:
University of California, Davis
Morgan J. Chen
Affiliation:
Huawei Technologies
Kunia Aihara
Affiliation:
Hirose Electric
Get access

Summary

As defined in IPC/JEDEC J-STD-012, chip-scale packaging (CSP) refers to a packaging method where the final package area dimensions are no larger than 1.2 times the die. Wafer-level packaging refers to a method where a wafer containing multiple chips is processed for packaging before the individual dies have been sawn-cut for separation [1]. While chip-scale packages have been widely available in high-volume production, hermetic packaging at the wafer level is still either at the research stage or in low-volume manufacturing.

The most popular wafer-level packaging technique is wafer-to-wafer bonding for the packaging of microelectromechanical system (MEMS) devices. Several techniques used by industry to package MEMS devices at the wafer level include epoxy seals, glass frit, glass-to-glass anodic bonding, and gold-to-gold bonding [4–9]. These techniques face two major problems. Firstly, organic materials outgas within the MEMS cavity during bonding processes, owing to the wetting compounds in the glass, gold, or epoxy layers. This contamination detrimentally affects the MEMS reliability. Secondly, most bonding processes utilize high temperatures (300 to 400°C), and this can degrade MEMS structures [10]. Furthermore, the available hermetic packages and ceramic or glass feed-throughs have significant losses at microwave frequencies, can be expensive, and add considerable weight to a system. Recent advances in low-temperature hermetic wafer-level packaging have shown promise for packaging multiple integrated circuits at wafer level [34]. One such process involves solder bonding, which combines the benefits of low-temperature conditions and thermodynamically stable eutectic bonding. Another viable alternative for packaging is an organic module, in which compact multilayer substrates house active and passive components; however, this presents even more challenges than those mentioned above. Although multilayer chip-on-flex modules using polyimide films are a proven technology for high-density packaging of microwave circuits [11, 12], polyimide is found to be incompatible with RF MEMS switch packaging owing to its high moisture absorption and high outgassing characteristics and the need to use high outgassing epoxies for lamination. In order to improve performance and provide ease of system integration, a hermetic MEMS package must be made with small, light-weight, planar interfaces constructed with MEMS-compatible materials. Thin-film plastic materials using liquid crystal polymer (LCP) are an attractive possibility for this application, owing to the low-temperature processing requirements for forming an interposer package.

Type
Chapter
Information
Publisher: Cambridge University Press
Print publication year: 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

http://www.siliconfareast.com/wl_package.htm
http://wireless.fcc.gov/outreach/2004broadbandforum/comments/YDI_benefits60GHz.pdf
Rebeiz, G.MEMS: Theory, Design, and Technology,John Wiley and Sons 2003Google Scholar
http://flipchips.com
Kim, S.-A.Seo, Y.-H.Cho, Y.-H.Kim, G. H.Bu, J.-U. 2003
Kim, S.-J.Kwon, Y.-S.Lee, H.-Y.Silicon MEMS packages for coplanar MMICsProc. Asia-Pacific Microwave Conf. 2000 664Google Scholar
Jourdain, A.De Moor, P.Pamidighantam, S.Tilmans, H. A. C.Investigation of the hermeticity of BCB-sealed cavities for housing (RF-) MEMS devicesProc. 15th IEEE Conf. on Micro Electro Mechanical Systems, Las Vegas 2002 677Google Scholar
Margomenos, A.Katehi, L. P. B.Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMSTransactions on Microwave Theory and Techniques 52 1626 2004CrossRefGoogle Scholar
Henderson, R. M.Katehi, L. P. B.Silicon-based micromachined packages for high-frequency applicationsMicrowave Theory and Techniques 47 1563 1999CrossRefGoogle Scholar
Tummala, R.Madisetti, V.System on chip or system on package?IEEE Design & Test of Computers 16 48 1999CrossRefGoogle Scholar
http://www.kapton-dupont.com
http://www.gore.com/electronics
Chen, M.Evers, N.Kapusta, C.ASME Interpack, part CSan Francisco, 2005Google Scholar
Chen, M. J.Pham, A-V.Kapusta, C.Design and development of a package using LCP for RF/microwave MEMS switchesIEEE Transactions on Microwave Theory and Techniques 54 4009 2006CrossRefGoogle Scholar
Pham, A.Laskar, J.Krishnamurthy, V.Cole, H. S.Sitnik-Nieters, T.Ultra-low loss millimeter wave multichip module interconnectsIEEE Transactions on Components, Packaging, and Manufacturing Technology, Part B 21 302 1998CrossRefGoogle Scholar
http://dynacocorp.com/Documents/LCPInfo.pdf
Balde, J. W.Crisis in technology: the questionable U.S. ability to manufacture thin-film multichip modulesIEEE Proceedings 80 1992CrossRefGoogle Scholar
Pecht, M.Characterization of polymides used in high density interconnectsIEEE Transactions on Components, Packaging, and Manufacturing Technology – Part B 17 1994CrossRefGoogle Scholar
Daum, W.Burdick, W. E.Fillion, R. A.Overlay high-density interconnect: a chips first multichip module technologyIEEE Computer 26 1993CrossRefGoogle Scholar
Haller, T. R.Whitmore, B. S.Zabinski, P. J.Gilbert, B. K.High frequency performance of GE high density interconnect modulesIEEE Transactions on Components, Hybrids, and Manufacturing Technology 16 1993CrossRefGoogle Scholar
Liu, F.Sundaram, V.Wiedenman, B.Tummala, R.IEEE 6th Int. Conf. on Electronic Packaging TechnologyShenzhen 2005Google Scholar
Butler, J. T.Chu, P. B.Bright, V. M.Saia, R. J.Adapting multichip module foundries for MEMS packagingInt. J. Microcircuits and Electronic Packaging 21 212 1998Google Scholar
Dunn, V. E.Hodges, N. E.Sy, O. A.Alyassini, W.Feng, M.Chang, Y. C.MMIC phase shifters and amplifiers for millimeter-wavelength active arraysIEEE MTT-S Int. Microwave Symposium Dig. 1 127 1989CrossRefGoogle Scholar
Barker, N. S.Rebeiz, G. M.Distributed MEMS true-time delay phase shifters and wide-band switchesIEEE Transactions on Microwave Theory and Techniques 46 1881 1998CrossRefGoogle Scholar
Kingsley, N.Papapolymerou, J.Organic ‘wafer-scale’ packaged miniature 4-bit RF MEMS phase shifterIEEE Transactions on Microwave Theory and Techniques 54 1229 2006CrossRefGoogle Scholar
Ko, Y. J.Park, J. Y.Bu, J. U.Integrated RF MEMS phase shifters with constant phase shiftProc. IEEE MTT-S Int. Microwave Symp. Dig. 3 2003 1489Google Scholar
Tan, G.-L.Mihailovich, R. E.Hacker, J. B.DeNatale, J. F.Rebeiz, G. M.Low-loss 2- and 4-bit TTD MEMS phase shifters based on SP4T switchesIEEE Transactions on Microwave Theory and Techniques 51 297 2003Google Scholar
Tan, G. L.Mihailovich, R. E.Hacker, J. B.DeNatale, J. F.Rebeiz, G. M.A 4-bit miniature X-band MEMS phase shifter using switched-LC networksProc. IEEE MTT-S Int. Microwave Symp. Dig. 3 2003 1477Google Scholar
Kim, M.Hacker, J. B.Milailovich, R. E.DeNatale, J. F.A DC-to-40 GHz Four-Bit RF MEMS True-Time-Delay NetworkIEEE Microwave and Wireless Components Letters 11 2001CrossRefGoogle Scholar
Lynes, G. D.Ultra broadband phase shiftersProc. IEEE MTT-S Int. Microwave Symp. Dig. 73 1973 104Google Scholar
Pozar, D. M.Microwave Engineering, 2nd edition,John Wiley and Sons 1999Google Scholar
Chen, M.Pham, A.Kapusta, C.Development of multilayer organic modules for hermetic packaging of RF MEMS circuitsProc. IEEE MTT-S Int. Microwave Symp. Dig. 2006 271Google Scholar
Chen, M. J.Pham, A-V.Kapusta, C.Multilayer organic multi-chip module implementing hybrid microelectromechanical systemsIEEE Transactions on Microwave Theory and Techniques 56 952 2008CrossRefGoogle Scholar
Chang-Chien, P. P.Tornquist, K. J.Nishimoto, M. Y.Low-temperature, hermetic, high-yield wafer-level packaging technologyNorthrup Grumman Technology Review Journal57 2006Google Scholar
http://www.radantmems.com
http://www.xcomwireless.net
http://www.memtronics.com
http://www.delfmems.com

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×