Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
4 - High-frequency devices
Published online by Cambridge University Press: 05 March 2013
Book contents
- Frontmatter
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt–series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index
- References
Summary
This chapter reviews the DC, high-frequency, and noise characteristics of field-effect and heterojunction bipolar transistors and discusses the figures of merit and design methodology of high-frequency passive devices such as inductors, transformers, transmission lines, and fixed and variable capacitors (varactors).
Definition of an active device
We define as active an electronic device whose power gain is larger than 1 or 0dB. The power gain is made possible by the conversion of DC power into time-varying power [1].
As illustrated in Figure 4.1, high-frequency active devices can be divided into two large families: field-effect and bipolar devices. In the field-effect category, we include the MOSFET and its derivatives (LDMOS, SOI, FinFET, nanowire FET) and the high electron mobility transistor (HEMT) with its pseudomorphic (p-HEMT) and metamorphic (m-HEMT) derivatives. MOSFETs are currently fabricated in silicon with some silicon-germanium present in the source and drain regions of p-MOSFETs in advanced technology nodes. Commercial HEMTs are realized in several III-V material systems, the most popular being GaAs/InGaAs, InP/InGaAs, and AlGaN/GaN.
- Type
- Chapter
- Information
- High-Frequency Integrated Circuits , pp. 142 - 317Publisher: Cambridge University PressPrint publication year: 2013
References
, Device Chapter, IEEE CSICS-2009 Primer Course, October 2009.
, , , , , , , , , , , , , , , , , , , , , and , “RF CMOS technology scaling in high-k/metal gate era for RF SoC (system-on-chip) applications,” IEEE IEDM Digest, pp. 604–607, December 2010, and M. Bohr, “Evolution of scaling from the homogeneous era to the heterogeneous era,” IEEE IEDM Digest, pp.1.1.4, December 2011.
, IEEE CSICS-2009 Primer Course, October 2009, Materials chapter.
Semiconductor materials data base Ioffe Institute,
, , , , , , , , , , , and , “Silicon D-band wireless transceivers and applications,” IEEE APMC, pp. 1857–1864, December 2010.
, , , and , “A new method for on-wafer noise measurement,”
IEEE MTT, 41(3): 375–381, March 1993.Google Scholar
, , , , , , , , and , “The invariance of the characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks,”
IEEE JSSC, 41(8): 1830–1845, August 2006.Google Scholar
, , , , , , , and , “RF and millimeter-wave IC design in the nano-(Bi)CMOS Era,” in (ed.), Si-based Semiconductor Components for Radio-Frequency Integrated Circuits (RF IC), Transworld Research Network, 2006, pp. 33–62.
, , , , , , and , “Algorithmic design of CMOS LNAs and PAs for 60GHz Radio,”
IEEE JSSC, 42(5): 1044–1057, May 2007.Google Scholar
and , US Patent no. 3102230, filed in 1960, issued in 1963.
and
Ning in Fundamentals of Modern VLSI Devices, Cambridge University Press, 2nd Edition, 2009.
International Technology Roadmap for Semiconductors (ITRS) 2003.
and , “Properties of semiconductor surface inversion layers in the electric quantum limit,”
Phys. Rev. 163: 816–835, 1967.Google Scholar
, , , , , , , , , , , , , , , , , , , , , , , , , , , and , “A 90nm logic technology featuring strained-silicon,”
IEEE ED, 51: 1790–1797, 2004.Google Scholar
, MOSFET Models for Spice Simulation, John Wiley, 2001
and , “Importance of source and drain resistance to the maximum fT of millimeter-wave MODFETs,”
IEEE EDL, 10(7): 291–293, July 1989.Google Scholar
, MMIC Design: GaAs FETs and HEMTs, Boston: Artech House, 1989, Chapter 6.
, , , , , , , , , , and , “CMOS SOCs at 100GHz: system architectures, device characterization, and IC design examples,” IEEE ISCAS, pp. 1971–1974, May 2007.
, , , , , and , “A Zero-IF 60GHz 65nm CMOS transceiver with direct BPSK modulation demonstrating up to 6Gb/s data rates over a 2m wireless link,”
IEEE JSSC, 44(8): 2085–2099, August 2009.Google Scholar
, Noise: Sources Characterization, Measurement, Englewood Cliffs, NJ: Prentice-Hall, 1970.
, , and , “Signal and noise properties of gallium arsenide microwave field effect transistors,”
Advances in Electronics and Electron Physics (AEEPS), 38, New York: Academic Press, 1975.
, , , , and , “On-die source-pull for the characterization of the W-band noise performance of 65nm general purpose (GP) and low power (LP) n-MOSFETs,” IEEE IMS, Digest, pp. 773–776, June 2009.
, , , , and , “Microscopic noise modeling and macroscopic noise models: how good a connection?”
IEEE ED, 41(5): 779–786, May 1994.Google Scholar
, Noise, Boston: Artech House, Boston, 2005, Chapter 4.
, Ph.D. Thesis, ECE Department, University of Toronto, September 2008.
, “Design of a low-power 60GHz transceiver front-end and behavioral modeling and implementation of its key building blocks in 65nm CMOS,” Ph.D. thesis, LAAS, Toulouse, France, December 2010.
, , , , , , , and , “Nanoscale CMOS transceiver design in the 90–170 GHz Range,”
IEEE MTT, 57: 3477–3490, December 2009.Google Scholar
, , , , , and , “Design of ion-implanted MOSFETs with very small physical dimensions,”
IEEE JSSC, 9: 256–258, 1974.Google Scholar
, “Intel's tri-gate transistor to enable next era in energy efficient performance,” Intel Press Release Presentation Slides, June 6, 2006.
, IEEE IEDM Short Course, December 2011.
, “Evolution of scaling from the homogeneous era to the heterogeneous era,” IEEE IEDM Digest, pp. 1.1.4, December 2011.
et al., “Heterojunction bipolar transistor technology,” in (ed.), Introduction to Semiconductor Technology: GaAs and Related Compounds, New York: Wiley-Interscience, 1990, pp. 170–230.
, , , , and , “InP/GaAsSb/InP DHBT's with high f T and f MAX for wireless communication applications,” IEEE GaAs IC Symposium, pp. 63–66. October 1999.
, , , , , , , , , , , , , , , , , , , and , “0.13μm SiGe BiCMOS technology fully dedicated to mm-wave applications,”
IEEE JSSC, 44(8): 2312–2321, September 2009.Google Scholar
, , , , , , , , and , “80–160 GHz CMOS and SiGe BiCMOS building block design,” IEEE IMS/RFIC 2008 Workshop WSB, “Advances in Circuit Design for Wideband Millimeter Wave Applications,” Atlanta, June 15, 2008.
, “Two integral relations pertaining to the electron transport through a bipolar transistor with non-uniform energy bandgap in the base region,”
Solid State Electron, 28: 1101–1103, 1985.Google Scholar
, , , and , “Characterization of the noise parameters of SiGe HBTs in the 70–170 GHz range,”
IEEE MTT, 59: 1983–2001, August 2011.Google Scholar
, , , , , , , and , “A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design,”
IEEE JSSC, 32(9): 1430–1438, 1997.Google Scholar
, , , , , , , , , , , , , , , , and , “SiGe BiCMOS for analog, high-speed digital and millimetre-wave applications beyond 50GHz,” IEEE BCTM Digest, pp. 223–230, October 2006.
, , , , , , , , , , , , , , , and , “High-speed SiGe BiCMOS technologies: 120nm status and end-of-roadmap challenges,” Si Monolithic Integrated Circuits in RF Systems, pp. 18–23, January 2007.
, , , , , , , and , “InP HBT integrated circuit technology for terahertz frequencies,” IEEE CSICS Digest, pp. 1–4, October 2010.
et al., “A new field-effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunctions,”
Jpn J. Appl. Phys., 19: L225–L227, 1980.Google Scholar
, , , and , “Electron mobilities in modulation doped GaAs-AlGaAs heterojunction superlattices,”
Appl. Phys. Lett., 33: 665, 1978.Google Scholar
, “Basics of compound semiconductor ICs,” IEEE CSICS, Primer Course, October 2010.
, , , and , “A 3V fully differential distributed limiting driver for 40Gb/s optical transmission systems,” IEEE JSSC, 38(9): 1485–1496, 2003.Google Scholar
, IEEE CSICS Short Course, October 2009.
, , , , , , , , , and , “Scaling of InP HEMT cascode integrated circuits to THz frequencies,” IEEE CSICS Digest, pp. 195–198, October 2010.
, , , , , and , “A comparison of silicon and III-V technology performance and building block implementations for 10 and 40Gb/s optical networking ICs,”
IJHSES, 13(1), and book chapter in Compound Semiconductor Integrated Circuits, pp. 27–58, 2003.Google Scholar
, “Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence,”
IEEE MTT, 37: 1340–1350, 1989.Google Scholar
and , “DARPA's nitride electronic next generation technology program,” IEEE CSICS Digest, pp. 7–10, October 2010.
, , , , , and , “High quality factor and high self-resonant frequency monolithic inductor for millimeter-wave Si-based IC′s,” IEEE MTT-S Digest, pp.193–196, June 2002.
, , , , , , , and , “Frequency-independent equivalent-circuit model for on-chip spiral inductors,”
IEEE JSSC, 38: 419–426, March 2003.Google Scholar
, , , , , and , “30–100GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits,”
IEEE MTT, 53(1): 123–133, 2005.Google Scholar
and , “Low-power circuits for a 10.7-to-86 Gb/s serial transmitter in 130nm SiGe BiCMOS,”
IEEE JSSC, 42(10): 2077–2085, October 2007.Google Scholar
, , , , , , , , , , , and , “Silicon D-band wireless transceivers and applications,” IEEE, APMC, pp.1857–1864, December 2010.
, “On the metrology of nanoscale silicon transistors above 100GHz,” Ph.D. Thesis, ECE Department, University of Toronto
2011.
, IEEE IEDM Short Course, December 2002.
, , , , and , “Circuit performance characterization of digital 45nm CMOS technology for applications around 110GHz,”
IEEE VLSI Circuits Symposium Digest, pp.162–163, Honolulu, June 2008.
- 7
- Cited by