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Characterization of the early stages of EM in Al-based metal lines by means of a HRRMT based on an extremely stable ambient temperature

Published online by Cambridge University Press:  15 February 2011

V. D'Haeger ,
W. De Ceuninck ,
L. De Schepper  and
L. M. Stals
V. D'Haeger
Affiliation:
Limburgs Universitair Centrum - Institute for Materials Research - Materials Physics Division - Universitaire Campus - Wetenschapspark I - B-3590 Diepenbeek (Belgium).
W. De Ceuninck
Affiliation:
Limburgs Universitair Centrum - Institute for Materials Research - Materials Physics Division - Universitaire Campus - Wetenschapspark I - B-3590 Diepenbeek (Belgium).
L. De Schepper
Affiliation:
Limburgs Universitair Centrum - Institute for Materials Research - Materials Physics Division - Universitaire Campus - Wetenschapspark I - B-3590 Diepenbeek (Belgium).
L. M. Stals
Affiliation:
Limburgs Universitair Centrum - Institute for Materials Research - Materials Physics Division - Universitaire Campus - Wetenschapspark I - B-3590 Diepenbeek (Belgium).
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Abstract

A high resolution resistometric measurement technique (HRRMT) is used to study electromigration (EM) in different Al-based metal lines. Instead of using a bridge-method, the high resolution is now obtained by performing experiments in a very stable temperature environment. The main advantage of this technique is that resistance variations are measured, due to processes that occur in the tested metal line only. During EM, both resistivity and geometrical variations can occur, both resulting in a resistance change. A new method is proposed in order to separate these two contributions on-line during the whole EM-experiment. It is shown that even at low current stress, geometrical changes are the main cause for the EM-induced resistance increase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 133
Copyright
Copyright © Materials Research Society 1996

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