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Fundamentals of Modern VLSI Devices

Authors

Yuan Taur
, University of California, San Diego,
Tak H. Ning
Published 2021

Description

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric…

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Key features

  • Updated throughout to cover a variety of recent developments, including FinFETs and fully-depleted SOI devices
  • Integrated appendices to allow for a smoother reading experience
  • Added homework exercises at the end of chapters in order to engage students with real-life problems and test their understanding

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