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9 - Electron spin-based methods

from Part II - Characterization techniques

Published online by Cambridge University Press:  05 October 2014

Olof Engström
Affiliation:
Chalmers University of Technology, Gothenberg
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Summary

Electron spin resonance

Basic principles

When a degenerate electronic energy level is exposed to perturbation by, for example, magnetic or electric fields, the degeneracy is removed and the level is split. Applying a magnetic field on atoms, a fine structure is found among their electron energy levels revealing this phenomenon and known as the Zeemann effect. A corresponding influence from an electric field exists and is labeled the Stark effect. Atomic orbitals are degenerate when populated by two electrons with opposite spin directions with quantum numbers +1/2 and –1/2, respectively. A magnetic field will align the magnetic moments resulting from the two spin directions into a parallel and antiparallel constellation. This gives rise to magnetic moments in opposite directions which makes the electron with positive spin increase its energy, while the negative spin lowers the energy of the other electron. By thermodynamic reasons when removing one of these electrons, the one left will adjust its spin to preferably occupy the lower of the two energy levels. It gives a possibility to study the system through excitations by photons and measure the absorption of photon intensity when exciting the single electron from the lower to the higher level. This is the physical base for spectroscopy by electron spin resonance (ESR). Since a material with single electron spins exhibits paramagnetic behavior, the technique is also labeled electron paramagnetic resonance (EPR). The two names are equally common in literature for designating the same characterization method (Poindexter and Caplan, 1983; Stesmans, 1993; Lenahan and Conley, 1998).

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The MOS System , pp. 221 - 228
Publisher: Cambridge University Press
Print publication year: 2014

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References

Brower, K. L. (1983). 29Si hyperfine structure of unpaired spins at the Si/SiO2 interface. Appl. Phys. Lett. 43, 1111.CrossRefGoogle Scholar
Brower, K. L. (1989). Electron paramagnetic resonance studies of Si-SiO2 interface defects. Semicond. Sci. Technol. 4, 970.CrossRefGoogle Scholar
Caplan, P. J., Poindexter, E. H., Deal, B. E. and Razouk, R. R. (1979). ESR centers, interface states and fixed oxide charge in thermally oxidized silicon wafers. J. Appl. Phys. 50, 5847.CrossRefGoogle Scholar
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Hoehne, F., Huebl, H., Galler, B., Stutzmann, M. and Brandt, M. S. (2010). Spin dependent recombination between phosphorus donors in silicon and Si/SiO2 interface states investigated with pulsed electrically detected electron double resonance. Phys. Rev. Lett. 104, 046402.CrossRefGoogle Scholar
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Mishima, T. D. and Lenahan, P. M. (2000). A spin dependent recombination study of radiation induced Pb1 centers at the (001) Si/SiO2 interface. IEEE Trans. Electron Dev. 47, 2249.Google Scholar
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Stesmans, A. (1986). Electron spin resonance of [11], [11] and [11] oriented dangling orbital Po defects at the (111) Si/SiO2 interface. Appl. Phys. Lett. 48, 972.CrossRefGoogle Scholar
Stesmans, A. (1993). Structural relaxation of P defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The P-generation-stress relationship. Phys. Rev. B 48, 2418.CrossRefGoogle Scholar
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  • Electron spin-based methods
  • Olof Engström, Chalmers University of Technology, Gothenberg
  • Book: The MOS System
  • Online publication: 05 October 2014
  • Chapter DOI: https://doi.org/10.1017/CBO9780511794490.012
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  • Electron spin-based methods
  • Olof Engström, Chalmers University of Technology, Gothenberg
  • Book: The MOS System
  • Online publication: 05 October 2014
  • Chapter DOI: https://doi.org/10.1017/CBO9780511794490.012
Available formats
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  • Electron spin-based methods
  • Olof Engström, Chalmers University of Technology, Gothenberg
  • Book: The MOS System
  • Online publication: 05 October 2014
  • Chapter DOI: https://doi.org/10.1017/CBO9780511794490.012
Available formats
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