Skip to main content Accessibility help
×
Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T01:23:05.665Z Has data issue: false hasContentIssue false

Chapter 10 - Generation and Recombination Processes In Semiconductors

Published online by Cambridge University Press:  05 June 2012

Kevin F. Brennan
Affiliation:
Georgia Institute of Technology
Get access

Summary

In this chapter, we consider generation and recombination processes in semiconductors. In a semiconductor, electrons and holes can be either generated or recombined within a given volume, thereby changing the local carrier concentrations. In a sense, there are sources and sinks of particles within the semiconductor itself. Although generation and recombination events change the local carrier concentrations, the entire semiconductor must always remain space-charge neutral. This requirement leads to the injection or extraction of charge at the contacts. In this chapter, we examine the different types of generation and recombination processes and outline their behaviors.

Basic Generation-Recombination Mechanisms

There are in general three basic generation–recombination channels available in semiconductors. These are

  1. Auger,

  2. radiative,

  3. thermal.

These mechanisms are defined as follows.

An Auger process is defined as an electron–hole pair (EHP) recombination followed by a transfer of energy from the recombined EHP to a free carrier, which is then excited to high energy within the band. The inverse Auger effect, in which an EHP is produced, is called impact ionization. In this case, a high-energy free carrier collides with the lattice and transfers its excess kinetic energy to an electron in the valence band, promoting it to the conduction band. Hence an EHP is produced after the event.

In a radiative recombination event, an EHP recombines with the emission of a photon. The electron recombines from the conduction band with a hole in the valence band.

Type
Chapter
Information
The Physics of Semiconductors
With Applications to Optoelectronic Devices
, pp. 489 - 543
Publisher: Cambridge University Press
Print publication year: 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×