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Plasma Etching of Copper Films Using IR Light Irradiation
Published online by Cambridge University Press: 25 February 2011
Abstract
Copper films are etched at a low temperature of 60 °C using a Cl2 plasma etching method with IR light irradiation. The etch rate is as high as 1 μm/min. The anisotropic Cu line patterns are obtained independent of the Cl2 gas flow rate and the etching pressure conditions. Moreover, there is no corrosion on the etched sample.
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- Copyright © Materials Research Society 1994
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