Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-04T00:56:38.308Z Has data issue: false hasContentIssue false
  • English
  • Français

The Reliability of Multilevel Metallization on InGaAs/GaAs Layers

Published online by Cambridge University Press:  25 February 2011

Edward Y. Chang ,
J.S. Chen ,
J.W. Wu  and
K.C. Lin
Edward Y. Chang
Affiliation:
Institute of Materials Science and Engineering
J.S. Chen
Affiliation:
Institute of Materials Science and Engineering
J.W. Wu
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
K.C. Lin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, ROC.
Get access

Abstract

Non-alloyed ohmic contacts using Ti/Pt/Au and Ni/Ge/Au on InGaAs/GaAs layers grown by Molecular Beam Epitaxy (MBE) have been investigated. The n-type InGaAs film has a doping concentration higher than 1X1019 cm-3. Specific contact resistance below 2X10-7 Ωcm2 could be easily achieved with Ti/Pt/Au. Due to the layer intermixing and outdiffusion of In and Ga, the specific contact resistance and sheet resistance increase after thermal treatment. When Ni/Ge/Au is used as the contact metal, the outdiffusion of In and Ga atoms is more severe than that of Ti/Pt/Au. After annealing at 450°C for two minutes, the Au4In formed and the characteristics of the contact became worse. All the phenomena illustrated above have been observed and investigated by Transmission Line Model, X-ray diffraction, Auger Electron Spectroscopy and Secondary Ion Mass Spectrum. As far as the thermal stability is concerned, it is convinced that Ti/Pt/Au is the best one of these two non-alloyed ohmic contact studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 387
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Woodall, J.M., Freeout, J.L., Pettit, GD., Jackson, T. and Kirchner, P., J.Vac. Sci. Technol., 19 626 (1981)CrossRefGoogle Scholar
2 Ren, F., Chu, S.N.G., Abernathy, C.R., Fullowan, T.R., Lothian, J.R. and Pearton, S.J., Semicond. Sci. Technol., 7, 793 (1992)CrossRefGoogle Scholar
3 Mead, C.A. and Spitzer, W.G., Phys. Rev., 134A, 173 (1964)Google Scholar
4 Lahav, A., Ren, F. and Kopf, R.F., Appl. Phys. Lett., 54, 1693 (1989)CrossRefGoogle Scholar
5 Benninghoven, A., Rudenauer, F.G. and Werner, H.W., Secondary Ion Mass Spectrometry, Wiley, New York, 1987 Google Scholar
6 Werner, H.W., Fresenius, Z. Anal. Chem., 314, 274 (1983)CrossRefGoogle Scholar
7 Ahmaol, M. and Arora, B.M., Solid State Electron., 35, 1441 (1992)Google Scholar