Skip to main content Accessibility help
×
Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-21T10:19:29.578Z Has data issue: false hasContentIssue false

8 - Lasers

from Part III - Active Components

Published online by Cambridge University Press:  05 April 2015

Lukas Chrostowski
Affiliation:
University of British Columbia, Vancouver
Michael Hochberg
Affiliation:
Coriant Advanced Technology Group
Get access

Summary

This chapter discusses one of the most challenging aspects of silicon photonics, namely the laser. It is highly desirable to have a silicon-compatible material that can provide optical emission and optical gain, for light sources (lasers, LEDs) and for on-chip optical amplifiers. Silicon is an indirect-band semiconductor, hence very inefficient at light generation. The common semiconductors used to make lasers at wavelengths where silicon is transparent (> 1.1 µm), such as In P-based compounds, have a crystal-lattice constant that is much larger than silicon, hence are difficult to grow on silicon. Germanium is the closest-matched material and has a smaller band gap than silicon; however, it is also an indirect-band semiconductor.

Present-day multi-project wafer (MPW) foundries (see Section 1.5.5) do not provide monolithic or hybrid-integrated lasers, and users rely on external lasers. While edge and grating couplers have both seen improvements in coupling efficiency, the lack of an on-chip source limits the potential applications of these chips. Laser integration is not widely available, and in turn the design of lasers for silicon photonics is an evolving research area. While there are design methodologies for the various laser-integration approaches described below, these depend on the type of approach, hence silicon photonic laser design is not a typical “text-book” topic.

This chapter describes the challenges associated with integrating lasers and optical amplifiers on the silicon photonics platform. It begins with the easiest method of getting light on the chip – namely using external lasers. We then discuss approaches with increasing level of difficulty: co-packaging, epitaxial bonding (hybrid lasers), monolithic growth, and germanium lasers.

External lasers

One approach for silicon photonic systems is to consider the laser as an optical power supply [1], similar to electrical power supplies, both delivering a constant amplitude.

There are several advantages for keeping the laser off-chip.

  1. (1) Thermal management is simplified by keeping the laser off-chip. Lasers are typically 10%–30% efficient, hence an on-chip laser would be a contributing heat source; the heat output is 3–10 times higher than the optical power of the laser itself.

  2. […]

Type
Chapter
Information
Silicon Photonics Design
From Devices to Systems
, pp. 295 - 310
Publisher: Cambridge University Press
Print publication year: 2015

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Yurii A, Vlasov. “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G”. IEEE Communications Magazine, IEEE 50.2 (2012), s67–s72 (cit. on p. 295).Google Scholar
[2] Y., Painchaud, M., Poulin, F., Pelletier. et al. “Silicon-based products and solutions”. Proc. SPIE. 2014 (cit. on p. 296).Google Scholar
[3] L. A., Coldren. S.W., Corzine, and M. L., Mashanovitch. Diode Lasers and Photonic Integrated Circuits. Wiley Series in Microwave and Optical Engineering. John Wiley & Sons, 2012. ISBN: 9781118148181 (cit. on p. 297).Google Scholar
[4] Roy, Lang and Kohroh, Kobayashi. “External optical feedback effects on semiconductor injection laser properties”. IEEE Journal of Quantum Electronics 16.3 (1980), pp. 347–355 (cit. n p. 298).Google Scholar
[5] R. W., Tkach and Andrew R., Chraplyvy. “Regimes of feedback effects in 1.5-|μm distributed feedback lasers”. Journal of Lightwave Technology 4.11 (1986), pp. 1655–1661 (cit. on p. 298).Google Scholar
[6] P., Bala Subrahmanyam, Y., Zhou. L., Chrostowski, and C. J., Chang-Hasnain. “VCSEL tolerance to optical feedback”. Electronics Letters 41.21 (2005), pp. 1178–1179 (cit. on p. 298).Google Scholar
[7] Laurent, Schares, Yoon H., Lee. Daniel, Kuchta, Uzi, Koren, and Len, Ketelsen. “An 8-wavelength laser array with high back reflection tolerance for high-speed silicon photonic transmitters”. Optical Fiber Communication Conference. Optical Society of America. 2014, Th1C-3 (cit. on p. 298).Google Scholar
[8] Chih-Hao, Chang, Lukas, Chrostowski, and Connie J., Chang-Hasnain. “Injection locking of VCSELs”. IEEE Journal of Selected Topics in Quantum Electronics 9.5 (2003), pp. 1386–1393 (cit. on p. 299).Google Scholar
[9] Peter De, Dobbelaere, Ali, Ayazi, Yuemeng, Chi, et al. “Packaging of silicon photonics systems”. Optical Fiber Communication Conference. Optical Society of America. 2014, W3I-2 (cit. on p. 299).Google Scholar
[10] Bradley, Snyder, Brian, Corbett, and Peter, OBrien. “Hybrid integration of the wavelength-tunable laser with a silicon photonic integrated circuit”. Journal of Lightwave Technology 31.24 (2013), pp. 3934–3942 (cit. on p. 299).Google Scholar
[11] Tao, Chu, Nobuhide, Fujioka, and Masashige, Ishizaka. “Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators”. Optics Express 17.16 (2009), pp. 14063–14068 (cit. on p. 300).Google Scholar
[12] Shuyu, Yang, Yi, Zhang, David W., Grund. et al. “A single adiabatic microring-based laser in 220 nm silicon-on-insulator”. Optics Express 22.1 (2014), pp. 1172–1180 (cit. onp.300).Google Scholar
[13] Wei, Shi, Han, Yun, Wen, Zhang, et al. “Ultra-compact, high-Q silicon microdisk reflectors”. Optics Express 20.20 (2012), pp. 21 840–21 846. DOI: 10.1364/OE.20.021840 p. (cit. on p. 300).Google Scholar
[14] Nobuhide, Fujioka, Tao, Chu, and Masashige, Ishizaka. “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators”. Journal of Lightwave Technology 28.21 (2010), pp. 3115–3120 (cit. on p. 300).Google Scholar
[15] Keita, Nemoto, Tomohiro, Kita, and Hirohito, Yamada. “Narrow-spectral-linewidth wavelength-tunable laser diode with Si wire waveguide ring resonators”. Applied Physics Express 5.8 (2012), p. 082701 (cit. on p. 300).Google Scholar
[16] Shinsuke, Tanaka, Seok-Hwan, Jeong, Shigeaki, Sekiguchi, et al. “High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology”. Optics Express 20.27 (2012), pp. 28 057–28 069 (cit. on p. 300).Google Scholar
[17] A. J., Zilkie. P., Seddighian, B. J., Bijlani. et al. “Power-efficient III-V/silicon external cavity DBR lasers”. Optics Express 20.21 (2012), pp. 23 456–23 462 (cit. on p. 300).Google Scholar
[18] Timothy, Creazzo, Elton, Marchena, Stephen B., Krasulick. et al. “Integrated tunable CMOS laser”. Optics Express 21.23 (2013), pp. 28 048–28 053 (cit. on p. 301).Google Scholar
[19] M.J.R., Heck, J. F., Bauters, M.L., Davenport, et al. “Hybrid silicon photonic integrated circuit technology”. IEEE Journal of Selected Topics in Quantum Electronics, 19.4 (2013), p. 6100117. DOI: 10.1109/JSTQE.2012.2235413 (cit. on pp. 301, 302).Google Scholar
[20] A., Fang. H., Park, O., Cohen. et al. “Electrically pumped hybrid AlGaInAs–silicon evanescent laser”. Optics Express 14 (2006), pp. 9203–9210 (cit. on p. 301).Google Scholar
[21] B., Ben Bakir, A., Descos. N., Olivier, et al. “Electrically driven hybrid Si/III-V Fabry-Perot lasers based on adiabatic mode transformers”. Optics Express 19 (2011), pp. 10 317–10 325 (cit. on p. 301).Google Scholar
[22] Guang-Hua, Duan, Jean-Marc, Fedeli, Shahram, Keyvaninia, and Dave, Thomson. “10 Gb/s integrated tunable hybrid III-V/si laser and silicon mach-zehnder modulator”. European Conference and Exhibition on Optical Communication. Optical Society of America. 2012, Tu-4 (cit. on p. 301).Google Scholar
[23] Andrew, Alduino, Ling, Liao, Richard, Jones, et al. “Demonstration of a high speed 4-channel integrated silicon photonics WDM link with hybrid silicon lasers”. Integrated Photonics Research, Silicon and Nanophotonics. Optical Society of America. 2010, PDIWI5 (cit. on p. 301).Google Scholar
[24] Di, Liang, Gunther, Roelkens, Roel, Baets, and John E., Bowers. “Hybrid integrated platforms for silicon photonics”. Materials 3.3 (2010), pp. 1782–1802. DOI: 10.3390/ma3031782 (cit. on p. 302).Google Scholar
[25] S., Keyvaninia. S., Verstuyft, L., Van Landschoot, et al. “Heterogeneously integrated III-V/silicon distributed feedback lasers”. Optics Letters 38.24 (2013), pp. 5434–5437. DOI: 10.1364/OL.38.005434. URL: http://ol.osa.org/abstract.cfm?URI=ol-38-24-5434 p. (cit. on p. 302).Google Scholar
[26] Stevan, Stankovic, Richard, Jones, Matthew N., Sysak. et al. “1310-nm hybrid III-V/Si Fabry–Perot laser based on adhesive bonding”. IEEE Photonics Technology Letters 23.23 (2011), pp. 1781–1783 (cit. on p. 302).Google Scholar
[27] Shahram, Keyvaninia, Gunther, Roelkens, Dries Van, Thourhout, et al. “Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser”. Optics Express 21.3 (2013), pp. 3784–3792 (cit. on p. 302).Google Scholar
[28] S., Keyvaninia. S., Verstuyft, S., Pathak. et al. “III-V-on-silicon multi-frequency lasers”. Optics Express 21.11 (2013), pp. 13 675–13 683. DOI: 10.1364/OE.21.013675. URL: http://www.opticsexpress.org/abstract.cfm?URI=oe-21-11-13675 (cit. on p. 302).Google Scholar
[29] Joris Van, Campenhout, Pedro Rojo, Romeo, Philippe, Regreny, et al. “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit”. Optics Express 15.11 (2007), pp. 6744–6749 (cit. on p. 302).Google Scholar
[30] Zhores, Alferov. “Double heterostructure lasers: early days and future perspectives”. IEEE Journal of Selected Topics in Quantum Electronics 6.6 (2000), pp. 832–840 (cit. on p. 303).Google Scholar
[31] W. T., Tsang. “Extremely low threshold (AlGa) As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxy”. Applied Physics Letters 40.3 (1982), pp. 217–219 (cit. on p. 303).Google Scholar
[32] Gyoungwon, Park, Oleg B., Shchekin. Diana L., Huffaker. and Dennis G., Deppe. “Low-threshold oxide-confined 1.3-μm quantum-dot laser”. IEEE Photonics Technology Letters 12.3 (2000), pp. 230–232 (cit. on p. 303).Google Scholar
[33] R., Fischer. H., Morkoc, D. A., Neumann. et al. “Material properties of high-quality GaAs epitaxial layers grown on Si substrates”. Journal of Applied Physics 60.5 (1986), pp. 1640–1647 (cit. on p. 303).Google Scholar
[34] O., Kwon. J.J., Boeckl, M. L., Lee. et al. “Monolithic integration of AlGalnP laser diodes on SiGe/Si substrates by molecular beam epitaxy”. Journal of Applied Physics 100 (2006), p. 013103 (cit. on p. 304).Google Scholar
[35] Z., Mi. J., Yang, P., Bhattacharya. and D. L., Huffaker. “Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon”. Electronics Letters 42.2 (2006), pp. 121–123 (cit. on p. 304).Google Scholar
[36] J.Z., Li, J.M., Hydrick, J.S., Park, et al. “Monolithic integration of GaAs/InGaAs lasers on virtual Ge substrates via aspect-ratio trapping”. Journal of the Electrochemical Society 156.7 (2009), H574–H578 (cit. on p. 304).Google Scholar
[37] A. D., Lee. Qi, Jiang, Mingchu, Tang, et al. “InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates”. IEEE Journal ofSelected Topics in Quantum Electronics 19.4 (2013), p. 1901107. DOI: 10.1109/JSTQE.2013.2247979 (cit. on p. 304).Google Scholar
[38] D., Choi. E., Kim, P.C., Mclntyre, and J.S., Harris. “Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication”. Applied Physics Letters 92 (2008), p. 203502 (cit. on p. 304).Google Scholar
[39] M.T., Currie, S.B., Samavedam, T. A., Langdo. C.W., Leitz, and E. A., Fitzgerald. “Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing”. Applied Physics Letters 72 (1998), p. 1718 (cit. on p. 304).Google Scholar
[40] H. J., Oh. K. J., Choi. W. Y., Loh. et al. “Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques”. Journal of Applied Physics 102 (2007), p. 054306 (cit. on p. 304).Google Scholar
[41] Zetian, Mi, Jun, Yang, Pallab, Bhattacharya, Guoxuan, Qin, and Zhenqiang, Ma. “High-performance quantum dot lasers and integrated optoelectronics on Si”. Proceedings ofthe IEEE 97.7 (2009), pp. 1239–1249 (cit. on p. 304).Google Scholar
[42] R., Camacho-Aguilera, Y., Cai. N., Patel, et al. “An electrically pumped germanium laser”. Optics Express 20 (2012), pp. 11316–11 320 (cit. on pp. 304, 306).Google Scholar
[43] J., Liu. X., Sun, D., Pan. et al. “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si”. Optics Express 15 (2007), pp. 11 272–11 277 (cit. on pp. 304, 305).Google Scholar
[44] Weng W., Chow. “Model for direct-transition gain in a Ge-on-Si laser”. Applied Physics Letters 100.19 (2012), 191113. DOI: http://dx.doi.org/10.1063/L4714540 (cit. on p. 305).Google Scholar
[45] Birendra, Dutt, Devanand S., Sukhdeo. Donguk, Nam, et al. “Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping”. IEEE Photonics Journal, IEEE 4.5 (2012), pp. 2002–2009 (cit. on pp. 305, 306).Google Scholar
[46] M. J., Sess. R., Geiger, R. A., Minamisawa. et al. “Analysis of enhanced light emission from highly strained germanium microbridges”. Nature Photonics 7.6 (2013), pp. 466–472 (cit. on pp. 305, 306).Google Scholar
[47] Yan, Cai, Zhaohong, Han, Xiaoxin, Wang, et al. “Analysis of threshold current behavior for bulk and quantum well germanium laser structures”. IEEE Journal of Selected Topics in Quantum Electronics 19.4 (2013), 1901009 (cit. on p. 306).CrossRefGoogle Scholar
[48] Xuejun, Xu, Sho, Narusawa, Taichi, Chiba, et al. “Silicon-based light emitting devices based on Ge self-assembled quantum dots embedded in optical cavities”. IEEE Journal of Selected Topics in Quantum Electronics 18.6 (2012), pp. 1830–1838 (cit. on p. 306).CrossRefGoogle Scholar
[49] Ozdal, Boyraz and Bahram, Jalali. “Demonstration of a silicon Raman laser”. Optics Express 12.21 (2004), pp. 5269–5273 (cit. on p. 306).Google Scholar
[50] L., Pavesi. L., Dal Negro, Ca., Mazzoleni. G., Franzo, and F., Priolo. “Optical gain in silicon nanocrystals”. Nature 408.6811 (2000), pp. 440–444 (cit. on p. 306).Google Scholar
[51] M.U., Pralle, N., Moelders. M. P., McNeal. et al. “Photonic crystal enhanced narrow-band infrared emitters”. Applied Physics Letters 81.25 (2002), pp. 4685–4687 (cit. on p. 306).Google Scholar
[52] Richard, Soref. “Toward silicon-based longwave integrated optoelectronics (LIO)”. Integrated Optoelectronic Devices 2008. International Society for Optics and Photonics. 2008, p. 689809 (cit. on p. 306).Google Scholar
[53] Pierre, Berini and Israel De, Leon. “Surface plasmon-polariton amplifiers and lasers”. Nature Photonics 6.1 (2012), pp. 16–24 (cit. on p. 306).Google Scholar

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

  • Lasers
  • Lukas Chrostowski, University of British Columbia, Vancouver, Michael Hochberg
  • Book: Silicon Photonics Design
  • Online publication: 05 April 2015
  • Chapter DOI: https://doi.org/10.1017/CBO9781316084168.009
Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

  • Lasers
  • Lukas Chrostowski, University of British Columbia, Vancouver, Michael Hochberg
  • Book: Silicon Photonics Design
  • Online publication: 05 April 2015
  • Chapter DOI: https://doi.org/10.1017/CBO9781316084168.009
Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • Lasers
  • Lukas Chrostowski, University of British Columbia, Vancouver, Michael Hochberg
  • Book: Silicon Photonics Design
  • Online publication: 05 April 2015
  • Chapter DOI: https://doi.org/10.1017/CBO9781316084168.009
Available formats
×