Book contents
- Frontmatter
- Contents
- Preface
- Acknowledgements
- Terminology
- 1 Introduction
- 2 Bulk semiconductors and the semi-classical model
- 3 Quantum confined inversion layers
- 4 Carrier scattering in silicon MOS transistors
- 5 The Boltzmann transport equation
- 6 The Monte Carlo method for the Boltzmann transport equation
- 7 Simulation of bulk and SOI silicon MOSFETs
- 8 MOS transistors with arbitrary crystal orientation
- 9 MOS transistors with strained silicon channel
- 10 MOS transistors with alternative materials
- Appendices
- A Mathematical definitions and properties
- B Integrals and transformations over a finite area A
- C Calculation of the equi-energy lines with the k·p model
- D Matrix elements beyond the envelope function approximation
- E Charge density produced by a perturbation potential
- Index
E - Charge density produced by a perturbation potential
from Appendices
Published online by Cambridge University Press: 05 August 2011
Book contents
- Frontmatter
- Contents
- Preface
- Acknowledgements
- Terminology
- 1 Introduction
- 2 Bulk semiconductors and the semi-classical model
- 3 Quantum confined inversion layers
- 4 Carrier scattering in silicon MOS transistors
- 5 The Boltzmann transport equation
- 6 The Monte Carlo method for the Boltzmann transport equation
- 7 Simulation of bulk and SOI silicon MOSFETs
- 8 MOS transistors with arbitrary crystal orientation
- 9 MOS transistors with strained silicon channel
- 10 MOS transistors with alternative materials
- Appendices
- A Mathematical definitions and properties
- B Integrals and transformations over a finite area A
- C Calculation of the equi-energy lines with the k·p model
- D Matrix elements beyond the envelope function approximation
- E Charge density produced by a perturbation potential
- Index
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- Nanoscale MOS TransistorsSemi-Classical Transport and Applications, pp. 464 - 467Publisher: Cambridge University PressPrint publication year: 2011